利用IGZO作为人工神经网络突触的多层交叉点器件

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581976

Atsushi Kondc, M. Kimura, T. Matsuda

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引用次数: 0

摘要

我们开发了一种多层交叉点器件，使用In-Ga-Zn-O半导体作为突触元件。玻璃基板上有200个突触。我们评估突触当前值的变化。随着电流的流动，电流值逐渐降低。该特性可用于改进的Hebban学习。

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Multilayer Cross-Point Device Using IGZO as Synapses in Artificial Neural Networks

We have developed a multilayer cross-point device using In-Ga-Zn-O semiconductor for synapse elements. There are 200 synapses on a glass substrates. We evaluate the change in the current value of the synapse. The current value gradually degrades by flowing current. The characteristic is available for modified Hebban learning.

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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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