采用MIST外延技术开发刚玉结构氧化镓功率器件

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581954

T. Shinohe

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引用次数: 4

摘要

刚玉结构Ga203具有优异的物理性能，是下一代功率器件材料的新候选材料。采用MIST EPITAXY®技术成功制备了具有极低比导通电阻0.1 m Ωcm2(击穿电压531 V)的薄膜sbd。

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Development of Corundum-Structured Gallium Oxide Power Devices by MIST EPITAXY®

Corundum-structured Ga203 is a new candidate for next-generation power device materials due to its excellent physical properties. Thin film SBDs with extremely low specific on-resistance of 0.1 m Ωcm2(breakdown voltage 531 V) were successfully fabricated using MIST EPITAXY® technology.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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