Hf层厚度对Ti/Hf/HfO /Au ReRAM器件影响的研究

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581952

R. Nakajima, A. Azuma, H. Yoshida, Tomohiro Shimizu, T. Ito, S. Shingubara

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引用次数: 0

摘要

具有Hf02介质层的电阻式随机存取存储器(ReRAM)器件由于其良好的SET/RESET开关性能的再现性而得到了广泛的研究。在这项工作中，我们研究了高频厚度对Ti/Hf/Hf02/Au ReRAM器件电阻开关特性的依赖性。结果表明，最佳Hf厚度约为10 nm，可以在较小的RESET电流下获得良好的SET/RESET电压再现性。

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Study on Effect of Hf Layer Thickness on Ti/Hf/HfO 2/Au ReRAM Device

Resistive random access memory (ReRAM) devices with a Hf02 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/Hf02/Au ReRAM device. It is suggested that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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