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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs 5nm工艺节点finfet的低温表征及模型提取
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102942
S. S. Parihar, G. Pahwa, Jun Z. Huang, Weike Wang, K. Imura, Chenming Hu, Y. Chauhan
{"title":"Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs","authors":"S. S. Parihar, G. Pahwa, Jun Z. Huang, Weike Wang, K. Imura, Chenming Hu, Y. Chauhan","doi":"10.1109/EDTM55494.2023.10102942","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102942","url":null,"abstract":"We present cryogenic characterization and compact model extraction of commercially fabricated 5nm technology FinFETs. A modified industry-standard BSIM-CMG model is used to accurately model band-tail, mobility, and velocity saturation effects up to 10K. At 10K, n-FinFET and p-FinFET show 87mV and 92mV threshold voltage shift and sub-threshold slopes of 12.7 and 16.7mV/decade (83% and 78% improvement), respectively. The simulated inverter and ring oscillator at 10K in iso IOFF condition show 38% and 36.53% delay improvement for VDD = 0.75V, respectively. At VDD = 0.35V, inverter simulations show ∽ 70% improvement in delay and Power-Delay-Product. Static leakage and power dissipation are major challenges in FinFETs; the above-mentioned performance enhancements highlight the potential of characterized technology in quantum computers.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128228526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly responsive ultraviolet narrowband organic photodetector based on acceptor free photomultiplication: A smart approach 基于无受体光电倍增的高响应紫外窄带有机光电探测器:一种智能方法
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102973
Sampati Rao Sridhar, Medha Joshi Pandey, Brijesh Kumar
{"title":"Highly responsive ultraviolet narrowband organic photodetector based on acceptor free photomultiplication: A smart approach","authors":"Sampati Rao Sridhar, Medha Joshi Pandey, Brijesh Kumar","doi":"10.1109/EDTM55494.2023.10102973","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102973","url":null,"abstract":"Two donor materials P3HT and ZnPc were used to realize photomultiplication (PM) effect in organic photo detectors (OPDs). The low concentrated ZnPc acts as isolated traps in active layer and helps to achieve PM in OPDs. The fabricated OPD showed high responsivity of 286.49 A/W at an operating voltage of -10V. This highly responsive detectors can act as a future guiding force on the field of image sensors.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134130220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neural Network Quantization is All You Need for Energy Efficient ISP 神经网络量化是所有你需要的节能ISP
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103005
Hyunwoo Je, Dongil Ryu, Haechang Lee, Kijeong Kim
{"title":"Neural Network Quantization is All You Need for Energy Efficient ISP","authors":"Hyunwoo Je, Dongil Ryu, Haechang Lee, Kijeong Kim","doi":"10.1109/EDTM55494.2023.10103005","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103005","url":null,"abstract":"It is common to devise and develop a Hand Crafted Feature for the modules constituting the CIS ISP Chain. This not only requires specialized domain knowledge, but also has a limitation in the degree of image quality improvement, and there have been many attempts to introduce deep learning to overcome this. However, it is very challenging to circuit the deep learning model directly on the CMOS sensor. Therefore, this study improves energy efficiency through Ultra Low Bit Quantization for demosaicing functions existing in the ISP chain, and proposes an ultra-high-speed/ultra-light model that enables Integer Only Inference. The proposed methodology can be utilized as an element technology that can be applied to deep learning models for other functions constituting ISP.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134244704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs 用于射频soc的低压和高压finfet高频特性和建模
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103010
Y. Chauhan, Anirban Kar, S. S. Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, K. Imura
{"title":"High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs","authors":"Y. Chauhan, Anirban Kar, S. S. Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, K. Imura","doi":"10.1109/EDTM55494.2023.10103010","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103010","url":null,"abstract":"Modern SoCs require low-voltage core transistors with excellent digital, analog and RF properties, thick oxide transistors for I/O buffers, and high voltage devices for effective power management. In this work, we present a complete DC to RF characterization, compact modeling strategy, and model extraction of commercially fabricated low and high-voltage FinFETs. The industry-standard BSIM-CMG compact model is modified to capture both low and high frequency characteristics accurately. Furthermore, we thoroughly compare the DC, analog, and RF performance of low-voltage, I/O, and LDMOS transistors from different CMOS technologies.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132964793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film PVD非晶MoSx膜固相结晶法改善MoS2膜质量
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103089
Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi
{"title":"Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film","authors":"Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi","doi":"10.1109/EDTM55494.2023.10103089","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103089","url":null,"abstract":"Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir SiCN储氧层对ZnO基ReRAM性能的改进
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103094
W. Ko, M. Song, Ki-Nam Kim, Jun-Ho Byun, Do-Yeon Lee, Eun-gi Kim, Eun-A Koo, So-Yeon Kwon, Geun-Ho Kim, Dong-Hyeuk Choi, Ga-Won Lee
{"title":"Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir","authors":"W. Ko, M. Song, Ki-Nam Kim, Jun-Ho Byun, Do-Yeon Lee, Eun-gi Kim, Eun-A Koo, So-Yeon Kwon, Geun-Ho Kim, Dong-Hyeuk Choi, Ga-Won Lee","doi":"10.1109/EDTM55494.2023.10103094","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103094","url":null,"abstract":"In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated devices show lower set/reset voltage and stable current, compared to the device without SiCN layer. XRD spectrum show it not a crystallization effect. Based on the XPS analysis results, SiCN layer seems to be a great oxygen blocking layer preventing the metal electrode from bonding with oxygen ion.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130585325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phosphosilicate Glass-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning 用于模拟深度学习的磷硅酸盐玻璃基纳秒质子可编程电阻器
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102987
M. Onen, Ju Li, B. Yildiz, Jesús A. del Alamo
{"title":"Phosphosilicate Glass-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning","authors":"M. Onen, Ju Li, B. Yildiz, Jesús A. del Alamo","doi":"10.1109/EDTM55494.2023.10102987","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102987","url":null,"abstract":"Programmable resistors are widely explored devices as building blocks for analog deep learning accelerators. In this work, we demonstrate Si-compatible nanoscale protonic devices based on phosphosilicate glass (PSG) electrolyte. The conductance modulation characteristics of our devices are ideal in terms of fast operation (5 ns/pulse), high energy efficiency (~fJ/pulse), large dynamic conductance range, linearity, symmetry, reversibility, retention, and high endurance. This paper summarizes the fabrication and characteristics of these devices with particular attention to the proton dynamics during fast operation.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116040314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On The Contribution of Secondary Holes in Hot-Carrier Degradation – a Compact Physics Modeling Perspective 热载流子降解中二次孔的贡献——一个紧凑的物理建模视角
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103111
S. Tyaginov, E. Bury, A. Grill, Z. Yu, A. Makarov, A. De Keersgieter, M. Vexler, M. Vandemaele, R. Wang, A. Spessot, A. Chasin, B. Kaczer
{"title":"On The Contribution of Secondary Holes in Hot-Carrier Degradation – a Compact Physics Modeling Perspective","authors":"S. Tyaginov, E. Bury, A. Grill, Z. Yu, A. Makarov, A. De Keersgieter, M. Vexler, M. Vandemaele, R. Wang, A. Spessot, A. Chasin, B. Kaczer","doi":"10.1109/EDTM55494.2023.10103111","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103111","url":null,"abstract":"We extend our compact physics model for hot-carrier degradation (HCD) by implementing the contribution to damage caused by the secondary carriers (generated by impact ionization) and revisiting transport modeling for primary carriers. To verify the model we employ planar field-effect transistors (FETs) with a gate length of 28 nm, which were subjected to HC stress under $V_{text{gs}}=V_{text{ds}}(V_{text{gs}}$, and $V_{text{ds}}$ are gate and drain voltages, respectively) and at conditions with $V_{text{gs}}$ much lower than $V_{text{ds}}$. We show that in the former case the contribution of secondary holes is small, whereas at lower $V_{text{gs}}$ the secondary holes result in a substantial portion of damage, especially at higher $V_{mathrm{d}mathrm{s}}$. Finally, we show that the model can accurately capture experimental changes of the linear drain current induced by HC stress.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116404533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Guideline of Device Optimization for Ferroelectric InGaZnO Transistor 铁电InGaZnO晶体管器件优化指南
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102963
Yu-Hao Chen, I-Ting Wang, Y. Zheng, T. Hou
{"title":"Guideline of Device Optimization for Ferroelectric InGaZnO Transistor","authors":"Yu-Hao Chen, I-Ting Wang, Y. Zheng, T. Hou","doi":"10.1109/EDTM55494.2023.10102963","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102963","url":null,"abstract":"The novel hafnium-zirconium oxide- (HZO-) based ferroelectric field-effect transistor with the InGaZnO channel (IGZO FeFET) has gained increasing interest due to its superior carrier mobility and low process temperature. However, the slow Erase speed is inevitable due to the intrinsic difficulty of IGZO channel inversion. Consequently, the floating of the channel region results in inefficient ferroelectric switching (FS) and an undesirable degradation of both operating speed and memory window. In this work, we provide a comprehensive device optimization guideline to mitigate the channel floating effect and enhance FS in the IGZO FeFET, including the deposition condition, thickness, and length of the IGZO channel.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123787676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1T FDSOI Based LIF Neuron Without Reset Circuitry: A proposal and Investigation 基于FDSOI的无复位电路LIF神经元的设计与研究
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103130
V. Rajakumari, S. Panda, K. P. Pradhan
{"title":"1T FDSOI Based LIF Neuron Without Reset Circuitry: A proposal and Investigation","authors":"V. Rajakumari, S. Panda, K. P. Pradhan","doi":"10.1109/EDTM55494.2023.10103130","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103130","url":null,"abstract":"In this article, an FDSOI-based neuron is demonstrated to mimic the functionalities of LIF neuron. As the proposed device-based neuron utilizes the single transistor latch (STL) mechanism and it takes the current input and voltage output in the shape of a spike, it does not require any extra circuit for reset. Furthermore, the proposed neuron shows an impressive energy consumption per spike i.e., less than 0.11 pJ/spike for all input values under 500 nA. Interestingly, it shows a spiking frequency in MHz range, which is ~5 orders greater than the biological neuron. Hence, due to its high frequency, energy and area efficiency, equivalent to that of a biological neuron and compatibility with CMOS process, the proposed FDSOI-based LIF neuron is more appropriate for large-scale hardware implementation of a spiking neural network (SNN).","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122365114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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