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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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All-Inkjet-Printed Organic Thin-Film Transistor and Amplifier for Low-Power High-Gain Wearables 用于低功耗高增益可穿戴设备的全喷墨印刷有机薄膜晶体管和放大器
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103096
Chen Jiang
{"title":"All-Inkjet-Printed Organic Thin-Film Transistor and Amplifier for Low-Power High-Gain Wearables","authors":"Chen Jiang","doi":"10.1109/EDTM55494.2023.10103096","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103096","url":null,"abstract":"This invited paper reviews the recent development of all-inkjet-printed organic thin-film transistors for wearables, for which an amplifier with low power and high gain is essential for biosensors. The techniques to lower the operating voltages of printed organic transistors are discussed and summarized, by reducing the trap density within the devices. By operating the devices in the subthreshold regime, an amplifier demonstrates low power (< 1 nW) and high gain (260 V/V). With a strip-helix-fiber structure, the amplifier be potentially weaved into textiles for wearables.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125615568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gr-Gb channel difference improvement of CMOS Image Sensor with transfer gate barrier optimization 基于转移栅极势垒优化的CMOS图像传感器Gr-Gb通道差改善
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103078
Youngju Lee, Namyoon Kim, Hyosik Kim, Wonho Lee
{"title":"Gr-Gb channel difference improvement of CMOS Image Sensor with transfer gate barrier optimization","authors":"Youngju Lee, Namyoon Kim, Hyosik Kim, Wonho Lee","doi":"10.1109/EDTM55494.2023.10103078","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103078","url":null,"abstract":"The color difference defect can be eliminated through the lens shading correction (LSC) function in the image signal processing (ISP) circuit. However, the design trend of the image sensor mounted on the smartphone is changing to the concept of correcting the image using the application processor (AP) circuit of the phone. The purpose of the study is to construct an appropriate model describing lens shading & Gr-Gb imbalance mechanisms affecting image quality and apply the model for image correction.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130312702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor: A Reliability Perspective 基于finfet的无结负电容氢气传感器的演示:可靠性视角
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103028
N. Gandhi, Rajeewa Kumar Jaisawal, Sunil Rathore, P. Kondekar, Shashank Banchhor, N. Bagga
{"title":"Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor: A Reliability Perspective","authors":"N. Gandhi, Rajeewa Kumar Jaisawal, Sunil Rathore, P. Kondekar, Shashank Banchhor, N. Bagga","doi":"10.1109/EDTM55494.2023.10103028","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103028","url":null,"abstract":"The process induced variations like random dopant fluctuation (RDF), interface trap charge (IFT), and work function variation (WFV) can significantly affect the reliability and aging of the device. In this paper, we proposed a novel Junctionless Negative Capacitance (JLNC) FinFET, realized as a hydrogen gas sensor, and investigated its reliability aspects in terms of threshold voltage (VTH) variations. Owing to inherent characteristics, the NC phenomenon is employed to obtain a high-sensitivity transistor. Using a well-calibrated TCAD setup, we explored the VTH variation due to: (i) the metal grain size; (ii) the gas pressure, (iii) the Si-SiO2 interface traps charges; (iv) the RDF; and (v) the ambient temperature. Finally, the device aging is evaluated, i.e., end-of-lifetime (EOL) defined as the shift of Vth by ~50mV.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127406020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis and Mitigation of Interference in a Multi-RADAR Environment 多雷达环境下的干扰分析与抑制
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102949
E. Onyejegbu, Arman Lee, A. Ashimbayeva, B. Nakarmi, I. Ukaegbu
{"title":"Analysis and Mitigation of Interference in a Multi-RADAR Environment","authors":"E. Onyejegbu, Arman Lee, A. Ashimbayeva, B. Nakarmi, I. Ukaegbu","doi":"10.1109/EDTM55494.2023.10102949","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102949","url":null,"abstract":"This paper examines the disturbances (spoofing and interferences) in a multi-RADAR environment. Analysis of these disturbances in linear frequency modulated (LFM) and random frequency-hopped LFM (RFHLFM) RADAR shows that the RFHLFM RADAR has better output performance compared to conventional LFM RADAR in terms of accuracy, SNR and range resolution, in the presence of multiple interference signals. Both RADAR systems operate in the K-band (18 - 27GHz) frequency range.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130139879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Budgeting and predicting pattern defects using edge placement error and machine learning 利用边缘放置误差和机器学习来预算和预测图案缺陷
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102957
Tae-Young Jee, Joonsang You, Honggoo Lee, Sangho Lee, Seungmo Hong, J. Seo, Roi Meir, Noa Oved, Jun-Tae Park, Shin-Ik Kim, Byung-Jo Lim, Chanhee Kwak, J. Yeo
{"title":"Budgeting and predicting pattern defects using edge placement error and machine learning","authors":"Tae-Young Jee, Joonsang You, Honggoo Lee, Sangho Lee, Seungmo Hong, J. Seo, Roi Meir, Noa Oved, Jun-Tae Park, Shin-Ik Kim, Byung-Jo Lim, Chanhee Kwak, J. Yeo","doi":"10.1109/EDTM55494.2023.10102957","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102957","url":null,"abstract":"Edge Placement Error (EPE) is a metric based on extreme value statistics that combines all the variations both in CD and Overlay domains. This is needed to characterize and ultimately monitor process performance and yield. In this paper, a new metrology methodology, all-in-one (or AIO), is developed to measure multiple process indexes such as CD, overlay, and EPE in one image. The robustness of the AIO metrology is confirmed by comparing AIO indexes and unit indexes measured separately. Using the data collected by AIO metrology, process budget characterization and wafermap analysis of the edge placement error (EPE) are performed to understand the cause of pattern defects for the 1x nm DRAM device at SK hynix. In addition, defect prediction is studied using EPE data in multiple layers and machine learning. As a result, we demonstrate EPE measurement, budgeting, and trend monitoring are useful to monitor pattern defects. The root-causes of such pattern defects are confirmed by the help of decent machine learning algorithm and process domain knowledge.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124416894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Process Condition Effects on Saddle Fin Profile and Its Device Performance Below 20nm Advanced DRAM 工艺条件对20nm以下先进DRAM鞍形翅型及其器件性能的影响
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103134
Yexiao Yu, Zhongming Liu, Hong Ma
{"title":"Process Condition Effects on Saddle Fin Profile and Its Device Performance Below 20nm Advanced DRAM","authors":"Yexiao Yu, Zhongming Liu, Hong Ma","doi":"10.1109/EDTM55494.2023.10103134","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103134","url":null,"abstract":"In this paper, a 16nm saddle fin structure was modeled. Active area width (AA CD), AA tapper angle, buried word line trench width (BW CD) and BW tapper angle effects on the device performance were investigated using a built-in drift-diffusion solver. Our analysis confirms that the smaller AA tapper angle and proper AA CD can generate higher on-state current (Ion) and lead to lower off-state current(Ioff). In addition, in our fin sputter model, lower sputter ratio increase Ion, and lower sputter angle reduce Ioff and subthreshold swing(SS).","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115380252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interpolative Device Models for Hafnia-Based FeFETs 基于hafnia的效应场效应管的插值器件模型
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103103
Imtiaz Hossen, Andreu L. Glasmann, S. Najmaei, G. Adam
{"title":"Interpolative Device Models for Hafnia-Based FeFETs","authors":"Imtiaz Hossen, Andreu L. Glasmann, S. Najmaei, G. Adam","doi":"10.1109/EDTM55494.2023.10103103","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103103","url":null,"abstract":"A two-tier multivariate-kriging interpolation method is proposed as a computationally efficient approach to model hafnia-based FeFET devices. We investigate how well this data-driven approach captures device-to-device variabilities when applied to realistic datasets sampled from a physics-based compact model with artificial variance. The framework provides methods for future analysis of experimental data, as well as selection of device operating conditions with the aim of unveiling FeFET strengths and weaknesses and optimizing these synaptic devices for neuromorphic circuit integration.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115451679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Speed 405nm Violet Superluminescent Diode for 3.6 Gbps Visible Light Communication 用于3.6 Gbps可见光通信的高速405nm紫色超发光二极管
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103038
Mengxi Dong, Junfei Wang, Chicheng Ma, Dong Li, Shanshan Wang, Lulu Zha, Nan Chi, Chao Shen
{"title":"High-Speed 405nm Violet Superluminescent Diode for 3.6 Gbps Visible Light Communication","authors":"Mengxi Dong, Junfei Wang, Chicheng Ma, Dong Li, Shanshan Wang, Lulu Zha, Nan Chi, Chao Shen","doi":"10.1109/EDTM55494.2023.10103038","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103038","url":null,"abstract":"III-nitride superluminescent diode (SLD) has emerged as a promising light emitter in visible light communication systems. This work demonstrates a high-speed 405-nm SLD with a titled facet and integrated absorber configuration on c-plane GaN substrate. A data rate of 3.6 Gbps has been successfully achieved through the utilization of bit-loading discrete multi-tone (DMT) modulation technique, paving a path towards high data rate optical wireless data links for B5G applications.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132641012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Oxide Species on the Reduction of Contact Resistivity of Al/oxide/n-GaN MIS Devices 氧化物对降低Al/ Oxide /n-GaN MIS器件接触电阻率的影响
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102978
J. Koba, J. Koike
{"title":"Effects of Oxide Species on the Reduction of Contact Resistivity of Al/oxide/n-GaN MIS Devices","authors":"J. Koba, J. Koike","doi":"10.1109/EDTM55494.2023.10102978","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102978","url":null,"abstract":"We investigated metal-insulator-semiconductor (MIS) contact using <tex>$mathbf{GaO}_{mathrm{x}},mathbf{TiO}_{mathrm{x}}$</tex>, and <tex>$mathbf{ZnO}_{mathrm{x}}$</tex> on n- GaN having Si doping concentration of <tex>$boldsymbol{2times 10}^{18} mathbf{cm}^{-3}$</tex>. While we obtained the low specific contact resistivity <tex>$(boldsymbol{rho}_{c})$</tex> of <tex>$boldsymbol{7.1times 10^{-7}Omega}cdot mathbf{cm}^{2}$</tex> with <tex>$mathbf{GaO}_{mathrm{x}}$</tex> and <tex>$boldsymbol{7.7times 10}^{-5}$</tex> Ω·cm<sup>2</sup> with <tex>$mathbf{TiO}_{mathrm{x},}rho_c$</tex> increased with <tex>$mathbf{ZnO}_{mathrm{x}}$</tex>. We further evaluated the band alignment of oxide/GaN and discussed the variation of the Schottky barrier height (SBH) based on the metal-induced gap states (MIGS) model to validate our results.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131896417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective 纳米片晶体管饱和现象的新认识:器件优化视角
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102974
Shashank Banchhor, N. Bagga, Nitanshu Chauhan, Manikandan S, A. Dasgupta, S. Dasgupta, A. Bulusu
{"title":"A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective","authors":"Shashank Banchhor, N. Bagga, Nitanshu Chauhan, Manikandan S, A. Dasgupta, S. Dasgupta, A. Bulusu","doi":"10.1109/EDTM55494.2023.10102974","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102974","url":null,"abstract":"The extension region and its electrostatics play a critical role in charge modulation in Nanosheet FET, thus, providing a unique insight into the saturation phenomenon. In this paper, we analyzed the behavior of saturation voltage (VDSAT) and saturation current $(mathrm{I}_{text{DSAT}})$ in a stacked Nanosheet (NSFET) using well-calibrated TCAD models. Through extensive simulations, we optimized the NSFET with varying device dimensions to find the suitable design parameters that can ensure the saturation condition and, thus, offers a reliable operation of NSFET-based analog circuits.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131134747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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