纳米片晶体管饱和现象的新认识:器件优化视角

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10102974

Shashank Banchhor, N. Bagga, Nitanshu Chauhan, Manikandan S, A. Dasgupta, S. Dasgupta, A. Bulusu

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引用次数: 0

摘要

扩展区及其静电在纳米片场效应管的电荷调制中起着关键作用，因此，提供了对饱和现象的独特见解。在本文中，我们使用校准良好的TCAD模型分析了堆叠纳米片(NSFET)中饱和电压(VDSAT)和饱和电流$(\ mathm {I}_{\text{DSAT}})$的行为。通过大量的仿真，我们优化了不同器件尺寸的NSFET，找到了合适的设计参数，可以保证饱和状态，从而为基于NSFET的模拟电路提供可靠的运行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective

The extension region and its electrostatics play a critical role in charge modulation in Nanosheet FET, thus, providing a unique insight into the saturation phenomenon. In this paper, we analyzed the behavior of saturation voltage (VDSAT) and saturation current $(\mathrm{I}_{\text{DSAT}})$ in a stacked Nanosheet (NSFET) using well-calibrated TCAD models. Through extensive simulations, we optimized the NSFET with varying device dimensions to find the suitable design parameters that can ensure the saturation condition and, thus, offers a reliable operation of NSFET-based analog circuits.

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来源期刊

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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