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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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Facile and Cost-Effective TFA doped In2O3 photodetectors for Deep Ultra Violet Applications 用于深紫外应用的简单且具有成本效益的TFA掺杂In2O3光电探测器
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102980
Prachi Gupta, S. Sharma
{"title":"Facile and Cost-Effective TFA doped In2O3 photodetectors for Deep Ultra Violet Applications","authors":"Prachi Gupta, S. Sharma","doi":"10.1109/EDTM55494.2023.10102980","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102980","url":null,"abstract":"Deep ultraviolet (DUV) photodetectors have critical applications in artificial intelligence, communications, missile detection, wearable technology, lithography aligners etc. However, commercially available DUV optoelectronic devices still possess low selectivity and stability. Here, we report facile, cost-effective metal-semiconductor-metal (MSM) (Al-In<inf>2</inf>O<inf>3</inf>-Al), DUV (<tex>$lambda sim 254$</tex> nm) photodetectors, by solution processed In<inf>2</inf>O<inf>3</inf> and photoactive tri-flouro acetic acid (TFA) additive In<inf>2</inf>O<inf>3</inf> thin films. The fabricated photodetector device structures exhibit the higher responsivity (2.79 A/W), external quantum efficiency (1362%), and higher detectivity <tex>$(sim 1.64 mathrm{x} 10^{11} text{cm} text{ Hz }^{1/2}mathrm{W}^{-1})$</tex>. Tfa based In<inf>2</inf>O<inf>3</inf> photodetectors exhibit low cost, scalability, with maximum photocurrent <tex>$(sim 15.5 mathrm{x} 10^{-6} mathrm{A})$</tex>. This work demonstrates the effects of doping photoactive additives in In<inf>2</inf>O<inf>3</inf> for the highly efficient, stable, and highly selective DUV detection applications.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115352114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature SiCN as dielectric for hybrid bonding 低温SiCN作为杂化键合介质
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103036
Venkat Sunil Kumar Channam, S. Iacovo, E. Walsby, Igor Belov, A. Jourdain, A. Sepúlveda, E. Beyne
{"title":"Low temperature SiCN as dielectric for hybrid bonding","authors":"Venkat Sunil Kumar Channam, S. Iacovo, E. Walsby, Igor Belov, A. Jourdain, A. Sepúlveda, E. Beyne","doi":"10.1109/EDTM55494.2023.10103036","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103036","url":null,"abstract":"For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below 250°C due to the presence of temporary bonding materials. In this paper we, present a new PECVD SiCN layer deposited at 175°C, optimized for hybrid bonding applications. The layer provides void-free wafer to wafer bonding interface demonstrated by high bond strength even at a post bond annealing (PBA) temperature of 200°C and devoid of any outgassing voids until 350°C. Additionally, it has been verified that the layer has excellent moisture and as electrical barrier properties.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115732134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biocompatible Memristive Devices for Brain-Inspired Applications 脑启发应用的生物相容性记忆器件
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103050
Aoze Han, Miaocheng Zhang, Liwei Zhang, Xingyu Chen, Yi Tong
{"title":"Biocompatible Memristive Devices for Brain-Inspired Applications","authors":"Aoze Han, Miaocheng Zhang, Liwei Zhang, Xingyu Chen, Yi Tong","doi":"10.1109/EDTM55494.2023.10103050","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103050","url":null,"abstract":"In this study, biocompatible memristive devices utilizing peptide templated gold nanoparticles (AuNPs) have been fabricated. The memristive devices exhibit great performance e. g., high switching on-off ratio (> 106), ultra-low switching voltage (< 0.4 V), and reproducible resistive switching. The internal mechanism based on conductive filaments has been studied in depth. Modulation of voltage pulse signals imitated the synaptic behaviors of paired-pulse facilitation (PPF), spike-timing-dependent plasticity (STDP), and the transition from short-term plasticity (STP) to long-term plasticity (LTP). These results demonstrate that memristive devices based on peptide-templated AuNPs have promising prospects in non-volatile memory and brain-inspired applications.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"241 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121095106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Evaluation of AFeRAM under Low Temperature Operation 低温工况下AFeRAM的性能评价
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103076
Yi-Chuan Chen, Yu-Chen Chen, K.-Y. Hsiang, M. Lee, Pin Su
{"title":"Performance Evaluation of AFeRAM under Low Temperature Operation","authors":"Yi-Chuan Chen, Yu-Chen Chen, K.-Y. Hsiang, M. Lee, Pin Su","doi":"10.1109/EDTM55494.2023.10103076","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103076","url":null,"abstract":"In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO $(text{Hf}_{0.1}text{Zr}_{0.9}mathrm{O}_{2})$ experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127114040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Deep Learning for Semiconductor Materials and Devices Design 半导体材料与器件设计的深度学习
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103098
C. Jeong, Sanghoon Myung, Byungseon Choi, Jinwoo Kim, Wonik Jang, I. Huh, Jae Myung Choe, Young-Gu Kim, Dae Sin Kim
{"title":"Deep Learning for Semiconductor Materials and Devices Design","authors":"C. Jeong, Sanghoon Myung, Byungseon Choi, Jinwoo Kim, Wonik Jang, I. Huh, Jae Myung Choe, Young-Gu Kim, Dae Sin Kim","doi":"10.1109/EDTM55494.2023.10103098","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103098","url":null,"abstract":"This paper provides two examples of use cases of deep learning (DL) in the fabrication and design of modern semiconductor devices: modeling of plasma dry-etching process and transistor performance. The use cases demonstrate an improved version of DL model in terms of model accuracy and prediction time by incorporating scientific knowledge into DL.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"182 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123290755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric FET based Signed Synapses of Excitatory and Inhibitory Connection fo Stochastic Spiking Neural Network based Optimizer 基于铁电场效应管的兴奋性和抑制性连接的符号突触&基于随机脉冲神经网络的优化器
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102951
Jin Luo, Tianyi Liu, Zhiyuan Fu, Xinming Wei, Qianqian Huang, Ruei-Hao Huang
{"title":"Ferroelectric FET based Signed Synapses of Excitatory and Inhibitory Connection fo Stochastic Spiking Neural Network based Optimizer","authors":"Jin Luo, Tianyi Liu, Zhiyuan Fu, Xinming Wei, Qianqian Huang, Ruei-Hao Huang","doi":"10.1109/EDTM55494.2023.10102951","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102951","url":null,"abstract":"For combinatorial optimization problem (CSP) solving of spiking neural networks (SNNs), both excitatory and inhibitory synaptic connections are necessary for mapping of constraints, along with adaptively-stochastic neuron. In this work, for the first time, a novel ferroelectric FET (FeFET) based signed synapse with only two transistors is proposed and experimentally demonstrated to achieve excitatory and inhibitory connections, enabling cascade circuit with our previous proposed FeFET-based adaptively-stochastic neuron for all ferroelectric SNN optimizer. Based on the proposed design, a stochastic SNN is implemented for fast solving CSPs with accuracy improvement by 200%, providing a promising ultralow-hardware-cost and energy-efficient solution for optimization.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125343229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wurtzite-Type Ferroelectrics for Microelectronic Devices: Scalability and Integration to Silicon based Ferroelectric FETs 微电子器件用纤锌矿型铁电体:硅基铁电场效应管的可扩展性和集成
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103080
S. Fichtner, Georg Schönweger, Frank Dietz, H. Hanssen, Heiko Züge, Tom-Niklas Kreutzer, F. Lofink, H. Kohlstedt, H. Kapels, M. Mensing
{"title":"Wurtzite-Type Ferroelectrics for Microelectronic Devices: Scalability and Integration to Silicon based Ferroelectric FETs","authors":"S. Fichtner, Georg Schönweger, Frank Dietz, H. Hanssen, Heiko Züge, Tom-Niklas Kreutzer, F. Lofink, H. Kohlstedt, H. Kapels, M. Mensing","doi":"10.1109/EDTM55494.2023.10103080","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103080","url":null,"abstract":"This paper reports on the scalability of the new wurtzite-type ferroelectrics between 500 and 10 nm thickness by investigating $mathrm{A}1_{1-mathrm{x}}text{Sc}_{mathrm{x}}mathrm{N}$ films. Unlike in most other ferroelectrics, no pronounced dependence between coercive field and film thickness was observed, therefore allowing operation below 3 V at 10 nm thickness. Together with our parallel success in fabricating the first wurtzite-type based Si FeFET, this is an important building block for developing advanced integrated electronic devices utilizing this novel material class.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114543741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM 高密度1T1C FeRAM中圆柱形铁电电容器屏蔽半径的新认识和记忆窗的重新评价
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102982
Minyue Deng, Chang Su, Zhiyuan Fu, Kaifeng Wang, Ruei-Hao Huang, Qianqian Huang
{"title":"New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM","authors":"Minyue Deng, Chang Su, Zhiyuan Fu, Kaifeng Wang, Ruei-Hao Huang, Qianqian Huang","doi":"10.1109/EDTM55494.2023.10102982","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102982","url":null,"abstract":"In this work, the electrical characteristic and its physics of the 3D cylindrical ferroelectric capacitor (FeCAP) are investigated for high-density 1T1C FeRAM based on a proposed novel simulation method. Different from planar FeCAP, it is found that an intrinsic polarization loss exists in cylindrical FeCAP for low voltage operation. Besides, there is a screen cylinder surface inside the cylindrical FeCAP under zero bias. Moreover, a novel method for accurately evaluating memory window of 3D FeCAP is proposed based on the screen surface, showing a significant overestimation by conventional method (∼44%). Based on the proposed method, it is shown that the geometric parameters optimization should be compromised for the maximum storage density.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129711714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory 三维NAND闪存中温度诱导的保留特性不稳定性
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102959
Ukju An, G. Yoon, Donghyun Go, Joung-June Park, Donghwi Kim, Jongwoo Kim, Jeong-Soo Lee
{"title":"Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory","authors":"Ukju An, G. Yoon, Donghyun Go, Joung-June Park, Donghwi Kim, Jongwoo Kim, Jeong-Soo Lee","doi":"10.1109/EDTM55494.2023.10102959","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102959","url":null,"abstract":"A temperature-induced instability of retention characteristics is observed in 3-D NAND flash. The effect of grain boundary (GB) is newly considered to investigate the retention characteristics at different program temperature <tex>$(T_{PGM})$</tex> and read temperature <tex>$(T_{READ})$</tex>. At high <tex>$T_{PGM}$</tex>, the decrease of threshold voltage <tex>$(V_{T})$</tex> is reduced. As the difference between <tex>$T_{PGM}$</tex> and <tex>$T_{READ}$</tex> increases, V<inf>T</inf> change after 4 h varies linearly from negative to positive value due to the increase of the GB effect.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128437827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantitative Analysis of Tunnel Oxide Nitrogen Concentration in 3D NAND using Low Acceleration Voltage, Low Current and Low Temperature STEM-EELS 利用低加速电压、低电流和低温STEM-EELS定量分析3D NAND中隧道氧化氮浓度
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103039
Jun-Young Lee, W. Jung, Jongkyu Cho, J. Oh, Jonghun Kim, Minki Choi
{"title":"Quantitative Analysis of Tunnel Oxide Nitrogen Concentration in 3D NAND using Low Acceleration Voltage, Low Current and Low Temperature STEM-EELS","authors":"Jun-Young Lee, W. Jung, Jongkyu Cho, J. Oh, Jonghun Kim, Minki Choi","doi":"10.1109/EDTM55494.2023.10103039","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103039","url":null,"abstract":"In 3D NAND device, the chemical composition of tunnel oxide (Tox) is an important factor, but hard to be measured due to the movement of N atoms caused by electron beam damage during TEM analysis. We measured the atomic concentration of N in Tox with standard deviation of <1.5% without N shift by minimizing the electron exposure using low acceleration voltage, low current and low temperature STEM-EELS.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"245 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114829954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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