Wurtzite-Type Ferroelectrics for Microelectronic Devices: Scalability and Integration to Silicon based Ferroelectric FETs

Abstract

This paper reports on the scalability of the new wurtzite-type ferroelectrics between 500 and 10 nm thickness by investigating $\mathrm{A}1_{1-\mathrm{x}}\text{Sc}_{\mathrm{x}}\mathrm{N}$ films. Unlike in most other ferroelectrics, no pronounced dependence between coercive field and film thickness was observed, therefore allowing operation below 3 V at 10 nm thickness. Together with our parallel success in fabricating the first wurtzite-type based Si FeFET, this is an important building block for developing advanced integrated electronic devices utilizing this novel material class.