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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s BEOL兼容超大尺度双层ITO/IGZO沟道场效应管，高迁移率106 cm2/V.s
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103073
S. Hooda, Manohar Lal, Chen Chun-Kuei, Shih-Hao Tsai, E. Zamburg, A. Thean
{"title":"BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s","authors":"S. Hooda, Manohar Lal, Chen Chun-Kuei, Shih-Hao Tsai, E. Zamburg, A. Thean","doi":"10.1109/EDTM55494.2023.10103073","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103073","url":null,"abstract":"In this work, we report an approach to significantly improve the electrical performances of a bottom-gated Indium-Gallium-Zinc oxide (IGZO) FET by introducing a thin layer of tin doped Indium oxide (ITO). We demonstrate low thermal budget ITO/IGZO FETs, with extremely scaled channel thickness and length of 4 nm and 50 nm respectively, achieving highest $mathrm{I}_{text{ON}}770mu mathrm{A}/mu mathrm{m}$, highest $mu_{text{eff}}$ of 106 $text{cm}^{2}/mathrm{V}cdot mathrm{s}$, and low SS of 92 mV/decade. We also investigate the role of ultra-thin ITO in defect passivation to enhance FET performance.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125651788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Building the Path to Ubiquitous Wireless Connectivity, from Materials to Systems 构建无所不在的无线连接之路，从材料到系统
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103048
Luis Andia, Yvan Morandini
{"title":"Building the Path to Ubiquitous Wireless Connectivity, from Materials to Systems","authors":"Luis Andia, Yvan Morandini","doi":"10.1109/EDTM55494.2023.10103048","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103048","url":null,"abstract":"Wireless systems and applications evolve together with the semiconductor technologies that make them possible. An essential element of such systems is the RF Front End (RFFE). In this paper, selected contributions of engineered substrates to the mobile 5G and Wi-Fi devices RFFE performance are studied. It provides guidance on required substrate evolution needed to address new and emerging challenges associated with next generation of wireless systems.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126754075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Sub-100-NM-Scale Measurement of Temperature Distribution in Joule-Heated Au Nanosheet Gas Sensors Using Self-Assembled Monolayers as Temperature Probes 用自组装单层膜作为温度探头测量焦耳加热金纳米片气体传感器温度分布的亚100纳米尺度研究
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103112
Taro Kato, Takahisa Tanaka, Hiromichi V. Miyagishi, J. Terao, K. Uchida
{"title":"Study on Sub-100-NM-Scale Measurement of Temperature Distribution in Joule-Heated Au Nanosheet Gas Sensors Using Self-Assembled Monolayers as Temperature Probes","authors":"Taro Kato, Takahisa Tanaka, Hiromichi V. Miyagishi, J. Terao, K. Uchida","doi":"10.1109/EDTM55494.2023.10103112","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103112","url":null,"abstract":"We present a new method for temperature distribution measurement with sub-100-nm spatial resolution using molecular modification on device surfaces. In this method, a Au nanosheet modified with self-assembled monolayers (SAM) is locally heated by Joule heating. The SAM molecules are desorbed due to the local heating, and the temperature is estimated from the molecular distribution evaluated by Kelvin probe force microscopy (KFM). The validity of the temperature estimation is confirmed by finite-element-analysis (FEA) results. This method is useful for visualizing thermal distribution in nanoscale devices such as metal nanosheet gas sensors.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116894089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Multiple Junction Photonic Demodulator with Low Power Consumption for Time-of-Flight Application 一种用于飞行时间应用的低功耗多结光子解调器
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102945
Shunqi Dai, Cristine Jin Estrada, Annan Xiong, Huanmei Yuan, Songcen Xu, Chen Xu, J. Yuan, M. Chan
{"title":"A Multiple Junction Photonic Demodulator with Low Power Consumption for Time-of-Flight Application","authors":"Shunqi Dai, Cristine Jin Estrada, Annan Xiong, Huanmei Yuan, Songcen Xu, Chen Xu, J. Yuan, M. Chan","doi":"10.1109/EDTM55494.2023.10102945","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102945","url":null,"abstract":"This paper presents a multiple junction photonic demodulator (MJPD) for Time-of-Flight (ToF) application which achieves low power consumption and is friendly to large optical window application. The impact of the n- and p- regions has been studied by theoretical calculation and TCAD simulation. MJPD with wide optical window does not only achieve high sensitivity but also achieve faster charge transfer at a lower guide voltage with the increase of n- and p- regions number in the photo-sensing region. This indicates MJPD has the potential to be applied in ToF image sensor pixel.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"35 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113992748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Comprehensive Simulation Study on Capacitive Memory With Metal-Ferroelectric-Insulator-Semiconductor Structure 金属-铁电-绝缘体-半导体结构电容存储器的综合仿真研究
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103108
Hongrui Zhang, C. Jin, X. Jia, Jiajia Chen, Huan Liu, Yan Liu, Xiao Yu, G. Han
{"title":"A Comprehensive Simulation Study on Capacitive Memory With Metal-Ferroelectric-Insulator-Semiconductor Structure","authors":"Hongrui Zhang, C. Jin, X. Jia, Jiajia Chen, Huan Liu, Yan Liu, Xiao Yu, G. Han","doi":"10.1109/EDTM55494.2023.10103108","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103108","url":null,"abstract":"We have theoretically investigated the operation mechanism of capacitive memory with metal-ferroel ectric-insulator-semiconductor (MFIS) structure by simulation. Since the large ratio of inversion and depletion capacitance of semiconductor, high $mathrm{C}_{text{HCS}}/mathrm{C}_{text{LCS}}$ can be achieved. Besides, multi-level cell operations are possible because of partial polarization switching. In addition, the role of doping concentration of n-type region $(mathrm{N}_{mathrm{D}})$ is explored. Lower ND results in higher $mathrm{C}_{text{HCS}}/mathrm{C}_{text{LCS}}$ due to the larger depletion width after erase.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114799677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-Solid-State Thin Film Lithium-ion Battery with High Ionic Conductivity Material LiNbO3 as Anode 以高离子电导率材料LiNbO3为负极的全固态薄膜锂离子电池
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102946
Xuechen Hu, Fuhan Cui, Xiaodong Huang
{"title":"All-Solid-State Thin Film Lithium-ion Battery with High Ionic Conductivity Material LiNbO3 as Anode","authors":"Xuechen Hu, Fuhan Cui, Xiaodong Huang","doi":"10.1109/EDTM55494.2023.10102946","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102946","url":null,"abstract":"An all-solid-state thin film lithiumion battery (TFLIB) with LiNbO3 (LNO) thin film as the anode for the first time. The LNO-anode TFLIB has excellent properties, including high capacity, small polarization, prominent rate performance, and good cycling performance. In addition, the ionic conductivity of the LNO film prepared in this paper can be as high as 5e−8 S cm−1. These results expand the application of LNOs in the field of all-solid-state battery.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115047504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a Smart Glove with Robust Bending Sensing Units for Advanced Human-Machine Interfacing 先进人机界面中具有坚固弯曲传感单元的智能手套的研制
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102941
Yue Hou, Hongming Cao, Y. Li, Zhaoyu Li, Qian Wang, Ziyu Wang, Hongyu Yu
{"title":"Development of a Smart Glove with Robust Bending Sensing Units for Advanced Human-Machine Interfacing","authors":"Yue Hou, Hongming Cao, Y. Li, Zhaoyu Li, Qian Wang, Ziyu Wang, Hongyu Yu","doi":"10.1109/EDTM55494.2023.10102941","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102941","url":null,"abstract":"We report a smart wearable glove that can wirelessly control the robotic hand. The developed Miura-ori structured AgNWs embedded conductive elastomer wire shows good stretchability (~50%), low resistivity (0.00075 $Omegacdot text{cm})$, and good resistance reliability. The integrated formed bending sensor and the wires make the sensing unit more robust than traditional bonded metal wires. The further development of circuit design and Bluetooth transmission successfully build the human-machine interfaces (HMIs) between humans and robots.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122649348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Periodic Fine Dimple Lines on the Surface of the Grain-Boundary Free Si Films Grown by Continuous-Wave-Laser Lateral Crystallization 连续波激光横向结晶生长晶界自由硅膜表面的周期性细凹痕
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103033
N. Sasaki, S. Takayama, Rikuto Sasai, Y. Uraoka
{"title":"Periodic Fine Dimple Lines on the Surface of the Grain-Boundary Free Si Films Grown by Continuous-Wave-Laser Lateral Crystallization","authors":"N. Sasaki, S. Takayama, Rikuto Sasai, Y. Uraoka","doi":"10.1109/EDTM55494.2023.10103033","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103033","url":null,"abstract":"Periodic fine dimple lines have been found on the surface of the grain-boundary free Si films obtained by the continuous-wave laser lateral crystallization. The dimple lines run parallel to the scan at a period of $sim 3upmu mathrm{m}$. The depth of the dimple is 3~5 nm (peak-to-valley). The internal angle of the dimple line is ~ 179.4°. These dimple lines result from fine-sub-boundaries with a rotation angle $theta < 2^{circ}$.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124697498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scalable Addressing Circuits for a Surface Code Quantum Computer in Silicon 表面码量子计算机的可扩展寻址电路
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103117
Rubaya Absar, H. Elgabra, Xuesong Chen, F. Sfigakis, J. Baugh, Lan Wei
{"title":"Scalable Addressing Circuits for a Surface Code Quantum Computer in Silicon","authors":"Rubaya Absar, H. Elgabra, Xuesong Chen, F. Sfigakis, J. Baugh, Lan Wei","doi":"10.1109/EDTM55494.2023.10103117","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103117","url":null,"abstract":"Practical quantum computers require coordinated operation on a large number of qubits $(sim 10^{4})$, posing significant implementation challenges. In this paper, we summarize our recent work on scalable CMOS circuits to route control signals in a silicon MOS quantum dot spin qubit. We also present a cryogenic compact model enabling circuit design and simulation at cryogenic temperatures. The proposed design is an important step toward implementation of scalable solid-state quantum processors.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124745513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing 肖特基势垒MOSFET超低功耗实时神经元的神经形态计算
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103118
Shubham Patil, J. Sakhuja, Ashutosh Kumar Singh, Anmol Biswas, V. Saraswat, Surinder Kumar, S. Lashkare, U. Ganguly
{"title":"Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing","authors":"Shubham Patil, J. Sakhuja, Ashutosh Kumar Singh, Anmol Biswas, V. Saraswat, Surinder Kumar, S. Lashkare, U. Ganguly","doi":"10.1109/EDTM55494.2023.10103118","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103118","url":null,"abstract":"Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-based ultra-low power voltage-controlled current source to enable real-time neurons for neuromorphic computing. Schottky-Barrier MOSFET is fabricated on a Silicon-on-insulator platform with polycrystalline Silicon as the channel and Nickel/Platinum as the source/drain. The Poly-Si and Nickel make the back-to-back Schottky junction enabling ultra-low ON current required for energy-efficient neurons.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125300560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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