金属-铁电-绝缘体-半导体结构电容存储器的综合仿真研究

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103108

Hongrui Zhang, C. Jin, X. Jia, Jiajia Chen, Huan Liu, Yan Liu, Xiao Yu, G. Han

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引用次数: 0

摘要

通过仿真，从理论上研究了金属-铁-电绝缘体-半导体(MFIS)结构电容存储器的工作机理。由于半导体的反转比和耗尽电容大，可以实现高$\ mathm {C}_{\text{HCS}}/\ mathm {C}_{\text{LCS}}$。此外，由于部分极化开关，多级单元操作成为可能。此外，还探讨了掺杂浓度对N型区域$(\ mathm {N}_{\ mathm {D}})$的作用。由于擦除后更大的耗尽宽度，较低的ND导致较高的$\ mathm {C}_{\text{HCS}}/\ mathm {C}_{\text{LCS}}$。

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A Comprehensive Simulation Study on Capacitive Memory With Metal-Ferroelectric-Insulator-Semiconductor Structure

We have theoretically investigated the operation mechanism of capacitive memory with metal-ferroel ectric-insulator-semiconductor (MFIS) structure by simulation. Since the large ratio of inversion and depletion capacitance of semiconductor, high $\mathrm{C}_{\text{HCS}}/\mathrm{C}_{\text{LCS}}$ can be achieved. Besides, multi-level cell operations are possible because of partial polarization switching. In addition, the role of doping concentration of n-type region $(\mathrm{N}_{\mathrm{D}})$ is explored. Lower ND results in higher $\mathrm{C}_{\text{HCS}}/\mathrm{C}_{\text{LCS}}$ due to the larger depletion width after erase.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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