Periodic Fine Dimple Lines on the Surface of the Grain-Boundary Free Si Films Grown by Continuous-Wave-Laser Lateral Crystallization

Abstract

Periodic fine dimple lines have been found on the surface of the grain-boundary free Si films obtained by the continuous-wave laser lateral crystallization. The dimple lines run parallel to the scan at a period of $\sim 3\upmu \mathrm{m}$. The depth of the dimple is 3~5 nm (peak-to-valley). The internal angle of the dimple line is ~ 179.4°. These dimple lines result from fine-sub-boundaries with a rotation angle $\theta < 2^{\circ}$.