A Comprehensive Simulation Study on Capacitive Memory With Metal-Ferroelectric-Insulator-Semiconductor Structure

Abstract

We have theoretically investigated the operation mechanism of capacitive memory with metal-ferroel ectric-insulator-semiconductor (MFIS) structure by simulation. Since the large ratio of inversion and depletion capacitance of semiconductor, high $\mathrm{C}_{\text{HCS}}/\mathrm{C}_{\text{LCS}}$ can be achieved. Besides, multi-level cell operations are possible because of partial polarization switching. In addition, the role of doping concentration of n-type region $(\mathrm{N}_{\mathrm{D}})$ is explored. Lower ND results in higher $\mathrm{C}_{\text{HCS}}/\mathrm{C}_{\text{LCS}}$ due to the larger depletion width after erase.