Hongrui Zhang, C. Jin, X. Jia, Jiajia Chen, Huan Liu, Yan Liu, Xiao Yu, G. Han
{"title":"A Comprehensive Simulation Study on Capacitive Memory With Metal-Ferroelectric-Insulator-Semiconductor Structure","authors":"Hongrui Zhang, C. Jin, X. Jia, Jiajia Chen, Huan Liu, Yan Liu, Xiao Yu, G. Han","doi":"10.1109/EDTM55494.2023.10103108","DOIUrl":null,"url":null,"abstract":"We have theoretically investigated the operation mechanism of capacitive memory with metal-ferroel ectric-insulator-semiconductor (MFIS) structure by simulation. Since the large ratio of inversion and depletion capacitance of semiconductor, high $\\mathrm{C}_{\\text{HCS}}/\\mathrm{C}_{\\text{LCS}}$ can be achieved. Besides, multi-level cell operations are possible because of partial polarization switching. In addition, the role of doping concentration of n-type region $(\\mathrm{N}_{\\mathrm{D}})$ is explored. Lower ND results in higher $\\mathrm{C}_{\\text{HCS}}/\\mathrm{C}_{\\text{LCS}}$ due to the larger depletion width after erase.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have theoretically investigated the operation mechanism of capacitive memory with metal-ferroel ectric-insulator-semiconductor (MFIS) structure by simulation. Since the large ratio of inversion and depletion capacitance of semiconductor, high $\mathrm{C}_{\text{HCS}}/\mathrm{C}_{\text{LCS}}$ can be achieved. Besides, multi-level cell operations are possible because of partial polarization switching. In addition, the role of doping concentration of n-type region $(\mathrm{N}_{\mathrm{D}})$ is explored. Lower ND results in higher $\mathrm{C}_{\text{HCS}}/\mathrm{C}_{\text{LCS}}$ due to the larger depletion width after erase.