Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing

Shubham Patil, J. Sakhuja, Ashutosh Kumar Singh, Anmol Biswas, V. Saraswat, Surinder Kumar, S. Lashkare, U. Ganguly
{"title":"Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing","authors":"Shubham Patil, J. Sakhuja, Ashutosh Kumar Singh, Anmol Biswas, V. Saraswat, Surinder Kumar, S. Lashkare, U. Ganguly","doi":"10.1109/EDTM55494.2023.10103118","DOIUrl":null,"url":null,"abstract":"Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-based ultra-low power voltage-controlled current source to enable real-time neurons for neuromorphic computing. Schottky-Barrier MOSFET is fabricated on a Silicon-on-insulator platform with polycrystalline Silicon as the channel and Nickel/Platinum as the source/drain. The Poly-Si and Nickel make the back-to-back Schottky junction enabling ultra-low ON current required for energy-efficient neurons.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-based ultra-low power voltage-controlled current source to enable real-time neurons for neuromorphic computing. Schottky-Barrier MOSFET is fabricated on a Silicon-on-insulator platform with polycrystalline Silicon as the channel and Nickel/Platinum as the source/drain. The Poly-Si and Nickel make the back-to-back Schottky junction enabling ultra-low ON current required for energy-efficient neurons.
肖特基势垒MOSFET超低功耗实时神经元的神经形态计算
高效能的实时突触和神经元是实现大规模神经形态计算的必要条件。在本文中,我们提出并演示了基于肖特基势垒mosfet的超低功率压控电流源,使实时神经元能够用于神经形态计算。肖特基势垒MOSFET是在绝缘体上的硅平台上制造的,多晶硅作为通道,镍/铂作为源极/漏极。Poly-Si和镍制成背靠背的肖特基结,使节能神经元所需的超低ON电流成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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