连续波激光横向结晶生长晶界自由硅膜表面的周期性细凹痕

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103033

N. Sasaki, S. Takayama, Rikuto Sasai, Y. Uraoka

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引用次数: 0

摘要

用连续波激光横向结晶法制备的无晶界硅薄膜表面出现了周期性的细小凹痕。凹痕线平行于扫描在$\sim 3\upmu \mathrm{m}$周期。酒窝的深度为35 nm(峰谷)。凹痕线的内角为179.4°。这些凹痕线是由具有旋转角度$\theta < 2^{\circ}$的细子边界产生的。

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Periodic Fine Dimple Lines on the Surface of the Grain-Boundary Free Si Films Grown by Continuous-Wave-Laser Lateral Crystallization

Periodic fine dimple lines have been found on the surface of the grain-boundary free Si films obtained by the continuous-wave laser lateral crystallization. The dimple lines run parallel to the scan at a period of $\sim 3\upmu \mathrm{m}$. The depth of the dimple is 3~5 nm (peak-to-valley). The internal angle of the dimple line is ~ 179.4°. These dimple lines result from fine-sub-boundaries with a rotation angle $\theta < 2^{\circ}$.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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