Performance Evaluation of AFeRAM under Low Temperature Operation

Abstract

In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO $(\text{Hf}_{0.1}\text{Zr}_{0.9}\mathrm{O}_{2})$ experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.