利用低加速电压、低电流和低温STEM-EELS定量分析3D NAND中隧道氧化氮浓度

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103039

Jun-Young Lee, W. Jung, Jongkyu Cho, J. Oh, Jonghun Kim, Minki Choi

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引用次数: 0

摘要

在三维NAND器件中，隧道氧化物(Tox)的化学成分是一个重要的因素，但由于TEM分析过程中电子束损伤引起N原子的移动，导致其化学成分难以测量。我们利用低加速电压、低电流和低温STEM-EELS最小化电子暴露，测量了Tox中N的原子浓度，标准差<1.5%，没有N偏移。

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Quantitative Analysis of Tunnel Oxide Nitrogen Concentration in 3D NAND using Low Acceleration Voltage, Low Current and Low Temperature STEM-EELS

In 3D NAND device, the chemical composition of tunnel oxide (Tox) is an important factor, but hard to be measured due to the movement of N atoms caused by electron beam damage during TEM analysis. We measured the atomic concentration of N in Tox with standard deviation of <1.5% without N shift by minimizing the electron exposure using low acceleration voltage, low current and low temperature STEM-EELS.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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