低温工况下AFeRAM的性能评价

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103076

Yi-Chuan Chen, Yu-Chen Chen, K.-Y. Hsiang, M. Lee, Pin Su

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引用次数: 1

摘要

在这项工作中，我们评估了反铁电ram (AFeRAM)在低温下的性能。利用我们的基于成核限制开关(NLS)的AFE模型，用AFE HZO $(\text{Hf}_{0.1}\text{Zr}_{0.9}\ maththrm {O}_{2})$实验数据校准，我们研究了AFeRAM电池在80K到300K的工作情况。我们的研究表明，在低温下运行AFeRAM可以提高传感裕度，读写时间和能源效率。

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Performance Evaluation of AFeRAM under Low Temperature Operation

In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO $(\text{Hf}_{0.1}\text{Zr}_{0.9}\mathrm{O}_{2})$ experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.

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来源期刊

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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