低温SiCN作为杂化键合介质

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103036

Venkat Sunil Kumar Channam, S. Iacovo, E. Walsby, Igor Belov, A. Jourdain, A. Sepúlveda, E. Beyne

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引用次数: 0

摘要

对于各种3D集成方案，例如集体晶圆堆叠(CoD2W)和晶圆粘合(D2W)，由于存在临时粘合材料，热预算需要远低于250°C。在本文中，我们提出了一种新的PECVD SiCN层，在175°C沉积，优化了杂化键合应用。该层提供无空洞的晶圆间键合界面，即使在200°C的键合后退火(PBA)温度下也具有高的键合强度，并且在350°C之前没有任何脱气空洞。此外，已证实该层具有优异的防潮和电阻隔性能。

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Low temperature SiCN as dielectric for hybrid bonding

For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below 250°C due to the presence of temporary bonding materials. In this paper we, present a new PECVD SiCN layer deposited at 175°C, optimized for hybrid bonding applications. The layer provides void-free wafer to wafer bonding interface demonstrated by high bond strength even at a post bond annealing (PBA) temperature of 200°C and devoid of any outgassing voids until 350°C. Additionally, it has been verified that the layer has excellent moisture and as electrical barrier properties.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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