高密度1T1C FeRAM中圆柱形铁电电容器屏蔽半径的新认识和记忆窗的重新评价

Minyue Deng, Chang Su, Zhiyuan Fu, Kaifeng Wang, Ruei-Hao Huang, Qianqian Huang
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引用次数: 0

摘要

本文基于一种新颖的仿真方法,研究了高密度1T1C FeRAM中三维圆柱形铁电电容器(FeCAP)的电学特性及其物理特性。与平面FeCAP不同的是,圆柱形FeCAP在低压工作时存在本征极化损耗。此外,在零偏压下,圆柱形FeCAP内部有一个筛筒面。此外,提出了一种基于屏幕表面准确评估3D FeCAP记忆窗口的新方法,表明传统方法显着高估(~ 44%)。基于所提出的方法,表明几何参数优化应该为最大存储密度而妥协。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM
In this work, the electrical characteristic and its physics of the 3D cylindrical ferroelectric capacitor (FeCAP) are investigated for high-density 1T1C FeRAM based on a proposed novel simulation method. Different from planar FeCAP, it is found that an intrinsic polarization loss exists in cylindrical FeCAP for low voltage operation. Besides, there is a screen cylinder surface inside the cylindrical FeCAP under zero bias. Moreover, a novel method for accurately evaluating memory window of 3D FeCAP is proposed based on the screen surface, showing a significant overestimation by conventional method (∼44%). Based on the proposed method, it is shown that the geometric parameters optimization should be compromised for the maximum storage density.
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