微电子器件用纤锌矿型铁电体:硅基铁电场效应管的可扩展性和集成

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103080

S. Fichtner, Georg Schönweger, Frank Dietz, H. Hanssen, Heiko Züge, Tom-Niklas Kreutzer, F. Lofink, H. Kohlstedt, H. Kapels, M. Mensing

{"title":"微电子器件用纤锌矿型铁电体:硅基铁电场效应管的可扩展性和集成","authors":"S. Fichtner, Georg Schönweger, Frank Dietz, H. Hanssen, Heiko Züge, Tom-Niklas Kreutzer, F. Lofink, H. Kohlstedt, H. Kapels, M. Mensing","doi":"10.1109/EDTM55494.2023.10103080","DOIUrl":null,"url":null,"abstract":"This paper reports on the scalability of the new wurtzite-type ferroelectrics between 500 and 10 nm thickness by investigating $\\mathrm{A}1_{1-\\mathrm{x}}\\text{Sc}_{\\mathrm{x}}\\mathrm{N}$ films. Unlike in most other ferroelectrics, no pronounced dependence between coercive field and film thickness was observed, therefore allowing operation below 3 V at 10 nm thickness. Together with our parallel success in fabricating the first wurtzite-type based Si FeFET, this is an important building block for developing advanced integrated electronic devices utilizing this novel material class.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wurtzite-Type Ferroelectrics for Microelectronic Devices: Scalability and Integration to Silicon based Ferroelectric FETs\",\"authors\":\"S. Fichtner, Georg Schönweger, Frank Dietz, H. Hanssen, Heiko Züge, Tom-Niklas Kreutzer, F. Lofink, H. Kohlstedt, H. Kapels, M. Mensing\",\"doi\":\"10.1109/EDTM55494.2023.10103080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the scalability of the new wurtzite-type ferroelectrics between 500 and 10 nm thickness by investigating $\\\\mathrm{A}1_{1-\\\\mathrm{x}}\\\\text{Sc}_{\\\\mathrm{x}}\\\\mathrm{N}$ films. Unlike in most other ferroelectrics, no pronounced dependence between coercive field and film thickness was observed, therefore allowing operation below 3 V at 10 nm thickness. Together with our parallel success in fabricating the first wurtzite-type based Si FeFET, this is an important building block for developing advanced integrated electronic devices utilizing this novel material class.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文通过研究$\mathrm{A}1_{1} -\mathrm{x}}\text{Sc}_{\mathrm{x}}\mathrm{N}$薄膜，报道了新型纤锌矿型铁电体在500 ~ 10 nm厚度之间的可扩展性。与大多数其他铁电体不同，在矫顽力场和薄膜厚度之间没有明显的依赖关系，因此可以在10nm厚度下以低于3v的电压运行。再加上我们成功制造了第一个基于纤锌矿型的Si ffet，这是利用这种新型材料开发先进集成电子器件的重要组成部分。

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Wurtzite-Type Ferroelectrics for Microelectronic Devices: Scalability and Integration to Silicon based Ferroelectric FETs

This paper reports on the scalability of the new wurtzite-type ferroelectrics between 500 and 10 nm thickness by investigating $\mathrm{A}1_{1-\mathrm{x}}\text{Sc}_{\mathrm{x}}\mathrm{N}$ films. Unlike in most other ferroelectrics, no pronounced dependence between coercive field and film thickness was observed, therefore allowing operation below 3 V at 10 nm thickness. Together with our parallel success in fabricating the first wurtzite-type based Si FeFET, this is an important building block for developing advanced integrated electronic devices utilizing this novel material class.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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