Facile and Cost-Effective TFA doped In2O3 photodetectors for Deep Ultra Violet Applications

Deep ultraviolet (DUV) photodetectors have critical applications in artificial intelligence, communications, missile detection, wearable technology, lithography aligners etc. However, commercially available DUV optoelectronic devices still possess low selectivity and stability. Here, we report facile, cost-effective metal-semiconductor-metal (MSM) (Al-In2O3-Al), DUV ($\lambda \sim 254$ nm) photodetectors, by solution processed In2O3 and photoactive tri-flouro acetic acid (TFA) additive In2O3 thin films. The fabricated photodetector device structures exhibit the higher responsivity (2.79 A/W), external quantum efficiency (1362%), and higher detectivity $(\sim 1.64\ \mathrm{x}\ 10^{11}\ \text{cm}\ \text{ Hz }^{1/2}\mathrm{W}^{-1})$. Tfa based In2O3 photodetectors exhibit low cost, scalability, with maximum photocurrent $(\sim 15.5\ \mathrm{x}\ 10^{-6}\ \mathrm{A})$. This work demonstrates the effects of doping photoactive additives in In2O3 for the highly efficient, stable, and highly selective DUV detection applications.