基于hafnia的效应场效应管的插值器件模型

Imtiaz Hossen, Andreu L. Glasmann, S. Najmaei, G. Adam
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引用次数: 0

摘要

本文提出了一种计算效率高的双层多变量克里格插值方法,用于模拟基于半晶体的ffet器件。我们研究了这种数据驱动的方法在应用于从具有人工方差的基于物理的紧凑模型中采样的实际数据集时如何很好地捕获设备到设备的可变性。该框架为未来的实验数据分析以及器件工作条件的选择提供了方法,旨在揭示FeFET的优势和劣势,并优化这些突触器件用于神经形态电路集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interpolative Device Models for Hafnia-Based FeFETs
A two-tier multivariate-kriging interpolation method is proposed as a computationally efficient approach to model hafnia-based FeFET devices. We investigate how well this data-driven approach captures device-to-device variabilities when applied to realistic datasets sampled from a physics-based compact model with artificial variance. The framework provides methods for future analysis of experimental data, as well as selection of device operating conditions with the aim of unveiling FeFET strengths and weaknesses and optimizing these synaptic devices for neuromorphic circuit integration.
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