利用边缘放置误差和机器学习来预算和预测图案缺陷

Tae-Young Jee, Joonsang You, Honggoo Lee, Sangho Lee, Seungmo Hong, J. Seo, Roi Meir, Noa Oved, Jun-Tae Park, Shin-Ik Kim, Byung-Jo Lim, Chanhee Kwak, J. Yeo
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引用次数: 0

摘要

边缘放置误差(EPE)是一种基于极值统计的度量,它结合了CD和Overlay域的所有变化。这是表征和最终监控工艺性能和良率所需要的。本文提出了一种新的测量方法,all-in-one (AIO),用于在一张图像中测量CD、overlay和EPE等多个过程指标。通过比较AIO指标与单独测量的单元指标,验证了AIO计量的稳健性。利用AIO计量收集的数据,进行工艺预算表征和边缘放置误差(EPE)的晶圆图分析,以了解SK海力士1x nm DRAM器件的模式缺陷的原因。此外,利用多层EPE数据和机器学习对缺陷预测进行了研究。因此,我们证明了EPE度量、预算和趋势监视对于监视模式缺陷是有用的。通过适当的机器学习算法和过程领域知识,确定了这种模式缺陷的根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Budgeting and predicting pattern defects using edge placement error and machine learning
Edge Placement Error (EPE) is a metric based on extreme value statistics that combines all the variations both in CD and Overlay domains. This is needed to characterize and ultimately monitor process performance and yield. In this paper, a new metrology methodology, all-in-one (or AIO), is developed to measure multiple process indexes such as CD, overlay, and EPE in one image. The robustness of the AIO metrology is confirmed by comparing AIO indexes and unit indexes measured separately. Using the data collected by AIO metrology, process budget characterization and wafermap analysis of the edge placement error (EPE) are performed to understand the cause of pattern defects for the 1x nm DRAM device at SK hynix. In addition, defect prediction is studied using EPE data in multiple layers and machine learning. As a result, we demonstrate EPE measurement, budgeting, and trend monitoring are useful to monitor pattern defects. The root-causes of such pattern defects are confirmed by the help of decent machine learning algorithm and process domain knowledge.
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