Y. Chauhan, Anirban Kar, S. S. Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, K. Imura
{"title":"High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs","authors":"Y. Chauhan, Anirban Kar, S. S. Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, K. Imura","doi":"10.1109/EDTM55494.2023.10103010","DOIUrl":null,"url":null,"abstract":"Modern SoCs require low-voltage core transistors with excellent digital, analog and RF properties, thick oxide transistors for I/O buffers, and high voltage devices for effective power management. In this work, we present a complete DC to RF characterization, compact modeling strategy, and model extraction of commercially fabricated low and high-voltage FinFETs. The industry-standard BSIM-CMG compact model is modified to capture both low and high frequency characteristics accurately. Furthermore, we thoroughly compare the DC, analog, and RF performance of low-voltage, I/O, and LDMOS transistors from different CMOS technologies.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Modern SoCs require low-voltage core transistors with excellent digital, analog and RF properties, thick oxide transistors for I/O buffers, and high voltage devices for effective power management. In this work, we present a complete DC to RF characterization, compact modeling strategy, and model extraction of commercially fabricated low and high-voltage FinFETs. The industry-standard BSIM-CMG compact model is modified to capture both low and high frequency characteristics accurately. Furthermore, we thoroughly compare the DC, analog, and RF performance of low-voltage, I/O, and LDMOS transistors from different CMOS technologies.