PVD非晶MoSx膜固相结晶法改善MoS2膜质量

Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi
{"title":"PVD非晶MoSx膜固相结晶法改善MoS2膜质量","authors":"Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi","doi":"10.1109/EDTM55494.2023.10103089","DOIUrl":null,"url":null,"abstract":"Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film\",\"authors\":\"Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi\",\"doi\":\"10.1109/EDTM55494.2023.10103089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103089\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

以非晶相为基础,通过固相结晶(SPC)对物理气相沉积Mos2薄膜进行了改进。在相同的SPC条件下,非晶MoSx (a- MoSx)薄膜的薄膜质量优于结晶良好的Mos2薄膜。这一结果归因于SPC前a-MoSx膜中的S/Mo比大于良好结晶膜中的S/Mo比,表明SPC前a-MoSx膜中含有足够的硫。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film
Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信