Y. Chauhan, Anirban Kar, S. S. Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, K. Imura
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High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs
Modern SoCs require low-voltage core transistors with excellent digital, analog and RF properties, thick oxide transistors for I/O buffers, and high voltage devices for effective power management. In this work, we present a complete DC to RF characterization, compact modeling strategy, and model extraction of commercially fabricated low and high-voltage FinFETs. The industry-standard BSIM-CMG compact model is modified to capture both low and high frequency characteristics accurately. Furthermore, we thoroughly compare the DC, analog, and RF performance of low-voltage, I/O, and LDMOS transistors from different CMOS technologies.