{"title":"Phosphosilicate Glass-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning","authors":"M. Onen, Ju Li, B. Yildiz, Jesús A. del Alamo","doi":"10.1109/EDTM55494.2023.10102987","DOIUrl":null,"url":null,"abstract":"Programmable resistors are widely explored devices as building blocks for analog deep learning accelerators. In this work, we demonstrate Si-compatible nanoscale protonic devices based on phosphosilicate glass (PSG) electrolyte. The conductance modulation characteristics of our devices are ideal in terms of fast operation (5 ns/pulse), high energy efficiency (~fJ/pulse), large dynamic conductance range, linearity, symmetry, reversibility, retention, and high endurance. This paper summarizes the fabrication and characteristics of these devices with particular attention to the proton dynamics during fast operation.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10102987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Programmable resistors are widely explored devices as building blocks for analog deep learning accelerators. In this work, we demonstrate Si-compatible nanoscale protonic devices based on phosphosilicate glass (PSG) electrolyte. The conductance modulation characteristics of our devices are ideal in terms of fast operation (5 ns/pulse), high energy efficiency (~fJ/pulse), large dynamic conductance range, linearity, symmetry, reversibility, retention, and high endurance. This paper summarizes the fabrication and characteristics of these devices with particular attention to the proton dynamics during fast operation.