Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film

Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi
{"title":"Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film","authors":"Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi","doi":"10.1109/EDTM55494.2023.10103089","DOIUrl":null,"url":null,"abstract":"Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.
PVD非晶MoSx膜固相结晶法改善MoS2膜质量
以非晶相为基础,通过固相结晶(SPC)对物理气相沉积Mos2薄膜进行了改进。在相同的SPC条件下,非晶MoSx (a- MoSx)薄膜的薄膜质量优于结晶良好的Mos2薄膜。这一结果归因于SPC前a-MoSx膜中的S/Mo比大于良好结晶膜中的S/Mo比,表明SPC前a-MoSx膜中含有足够的硫。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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