Ryo Ono, Shinya Imai, T. Kawanago, I. Muneta, K. Kakushima, K. Tsutsui, Tetsuya Tatsumi, S. Tomiya, H. Wakabayashi
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引用次数: 0
Abstract
Physical vapor deposited Mos2 film was improved via solid-phase crystallization (SPC) from the amorphous phase. Under the same SPC conditions, better film quality was observed for an amorphous-MoSx (a- MoSx) film than for a well-crystallized Mos2 film. This result is attributed to the S/Mo ratio in the a-MoSx film before SPC being greater than that in the well-crystallized film, indicating that the a-MoSx film contained sufficient sulfur prior to the SPC.