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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications 电源应用的嵌入式MOS-HEMT技术的深刻见解
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102971
B. Mohamad, C. L. Royer, F. Rigaud-Minet, C. Piotrowicz, P. F. Paes Pinto Rocha, C. Leurquin, W. Vandendaele, R. Escoffier, J. Buckley, S. Bécu, J. Biscarrat, R. Gwoziecki
{"title":"Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications","authors":"B. Mohamad, C. L. Royer, F. Rigaud-Minet, C. Piotrowicz, P. F. Paes Pinto Rocha, C. Leurquin, W. Vandendaele, R. Escoffier, J. Buckley, S. Bécu, J. Biscarrat, R. Gwoziecki","doi":"10.1109/EDTM55494.2023.10102971","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102971","url":null,"abstract":"In this paper, we present a general overview of AIGaN/GaN MOS channel High Electron Mobility Transistor (HEMTs) with fully recessed gate architecture fabricated on 200mm Si-wafer. Specifically, an insight on its benefits compared to market competitors is brought out respectively from transistor electrical characteristics to robustness behavioral aspects.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122587524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Forward Body Bias Technique in DRAM Peripheral Transistor at Cryogenic Temperature for Quantum Computing Applications 量子计算应用中低温DRAM外设晶体管的正向体偏置技术
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102979
Hyunseo You, Jehyun An, K. Nam, Bo-Gab Kang, Jongseo Park, N. Lee, Seonhaeng Lee, R. Baek
{"title":"Forward Body Bias Technique in DRAM Peripheral Transistor at Cryogenic Temperature for Quantum Computing Applications","authors":"Hyunseo You, Jehyun An, K. Nam, Bo-Gab Kang, Jongseo Park, N. Lee, Seonhaeng Lee, R. Baek","doi":"10.1109/EDTM55494.2023.10102979","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102979","url":null,"abstract":"For the first time, the body effect in a dynamic random-access memory (DRAM) peripheral transistor is investigated at cryogenic temperatures. The experimental results confirm that the forward body bias (FBB) reduces hot-carrier degradation (HCD). Furthermore, an FBB to boost the performance was tested by considering the leakage currents of the transistors. These results will aid in understanding FBB operation in planar bulk MOSFETs at cryogenic temperatures.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122148235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications 新一代存储用铁电TiN/Hf0.5Zr0.5O2/TiN电容器热收支研究
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103015
Hye Ryeon Park, Jeong Gyu Yoo, Jong-Mook Kang, Min Kwan Cho, Taeho Gong, Seong-Chon Park, Seungbin Lee, Jin-Hyun Kim, Seojun Lee, Rino Choi, H. S. Kim, Y. Jung, Jiyoung Kim, S. Kim
{"title":"A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications","authors":"Hye Ryeon Park, Jeong Gyu Yoo, Jong-Mook Kang, Min Kwan Cho, Taeho Gong, Seong-Chon Park, Seungbin Lee, Jin-Hyun Kim, Seojun Lee, Rino Choi, H. S. Kim, Y. Jung, Jiyoung Kim, S. Kim","doi":"10.1109/EDTM55494.2023.10103015","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103015","url":null,"abstract":"In this study, the thermal budget of atomic layer deposited Hf0.5Zr0.5O2(HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500°C) and time (1–48 h) conditions. As a result, although the annealing time needs to be increased, the ferroelectric properties with robust endurance were realized by lowering the annealing temperature.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122165008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strategies for improving the device performance of $2mathbf{D}$ perovskite field-effect transistors 提高$2mathbf{D}$钙钛矿场效应晶体管器件性能的策略
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102936
Hyeonmin Choi, Seok Woo Lee, Joonha Jung, Yeeun Kim, Jaeyong Woo, Youjin Reo, Yong‐Young Noh, Takhee Lee, K. Kang
{"title":"Strategies for improving the device performance of $2mathbf{D}$ perovskite field-effect transistors","authors":"Hyeonmin Choi, Seok Woo Lee, Joonha Jung, Yeeun Kim, Jaeyong Woo, Youjin Reo, Yong‐Young Noh, Takhee Lee, K. Kang","doi":"10.1109/EDTM55494.2023.10102936","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102936","url":null,"abstract":"In this work, we demonstrate strategies for improving the device performance of Ruddlesden popper perovskite field effect transistors by using morphological and compositional engineering concepts. These strategies impact directly on both the local and microstructure of perovskites, thereby improving the structural stability and charge carrier mobility, which may lead to viable strategies for developing high-performance perovskite-based electronic devices.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131491194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser-Induced Recrystallization of Perovskite Quantum Dots for Flexible/Wearable Light-Emitting Devices 柔性/可穿戴发光器件用钙钛矿量子点激光诱导重结晶研究
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103037
Ji Eun Kim, Jae Chan Heo, Jung Hwan Park, Han Eol Lee
{"title":"Laser-Induced Recrystallization of Perovskite Quantum Dots for Flexible/Wearable Light-Emitting Devices","authors":"Ji Eun Kim, Jae Chan Heo, Jung Hwan Park, Han Eol Lee","doi":"10.1109/EDTM55494.2023.10103037","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103037","url":null,"abstract":"Perovskite-structured quantum dots have received a lot of attentions to apply future light-emitting devices due to their superior optoelectronic properties. However, in normal annealing processes, perovskite quantum dots exhibited material unstability of the decreased lifetime, and the deteriorated optoelectrical properties. In this paper, we present a laser-assisted recrystallization method of perovskite quantum dots. Laser crystallized only the material through the instantaneous heating. The laser-heated material was optimized by using theoretical calculations and various material analyses.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125538637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operation Scheme Optimization for Charge Trap Transistors (CTTs) Based on Fully Depleted Silicon-On-Insulator (FDSOI) Platform 基于全耗尽绝缘体上硅(FDSOI)平台的电荷阱晶体管(CTTs)运行方案优化
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103101
Wannian Wang, Bing Chen, Jiayi Zhao, S. Loubriat, G. Besnard, C. Maleville, O. Weber, R. Cheng
{"title":"Operation Scheme Optimization for Charge Trap Transistors (CTTs) Based on Fully Depleted Silicon-On-Insulator (FDSOI) Platform","authors":"Wannian Wang, Bing Chen, Jiayi Zhao, S. Loubriat, G. Besnard, C. Maleville, O. Weber, R. Cheng","doi":"10.1109/EDTM55494.2023.10103101","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103101","url":null,"abstract":"Recently, the charge trap transistors (CTTs) based on CMOS logic devices have been actively explored. The charges in the CTT gate stack could be injected by the hot carrier (HC) effect and removed by changing the polarity of the gate electric field, which can be used as the “program” and “erase” operations for memory applications. In this work, the performance of the FDSOI CTT under various program voltages has been investigated. It is found that when the devices are under moderate horizontal acceleration (the bias voltage $V_{mathrm{D}}=1/2V_{mathrm{G}}$), the CTT shows better performance uniformity and reliability. In addition, the related working mechanism and an optimized operation scheme have also been proposed.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"29 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128301285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A noble VFO(Vertical wire Fan Out) technology for small form factor and high performance memory applications 一种高贵的VFO(垂直线扇出)技术，适用于小尺寸和高性能内存应用
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102966
Ki-Jun Sung, Kyoungtae Eun, Seowon Lee, Sungwon Yoon, H.-Y Son, Kang-wook Lee
{"title":"A noble VFO(Vertical wire Fan Out) technology for small form factor and high performance memory applications","authors":"Ki-Jun Sung, Kyoungtae Eun, Seowon Lee, Sungwon Yoon, H.-Y Son, Kang-wook Lee","doi":"10.1109/EDTM55494.2023.10102966","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102966","url":null,"abstract":"FOWLP technology is one of the latest technologies to meet the requirements of small form-factor and high performance for mobile application. In this paper, a new VFO package has been introduced as the next generation platform based on FOWLP technology. This package has unique features of vertical wires on reconstructing stacked dies and multiple RDLs. VFO technology shows a thinner z-height with a stable package warpage, good thermal performance and an enhanced electrical characterization as well as a good reliability. Therefore, it will lead a small form factor and high performance memory application.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134106405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays 基于晶体管阵列的低温CMOS变异性和可靠性综合评估
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102937
A. Grill, J. Michl, J. Diaz-Fortuny, A. Beckers, E. Bury, A. Chasin, T. Grasser, M. Waltl, B. Kaczer, K. De Greve
{"title":"A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays","authors":"A. Grill, J. Michl, J. Diaz-Fortuny, A. Beckers, E. Bury, A. Chasin, T. Grasser, M. Waltl, B. Kaczer, K. De Greve","doi":"10.1109/EDTM55494.2023.10102937","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102937","url":null,"abstract":"Integrating CMOS circuits and qubits at cryogenic temperatures requires high-frequency operation in the GHz range together with ultra-low power consumption and very low noise figures. One approach to reduce power consumption is to optimize circuits towards operation at lower supply voltages. However, this reduces the tolerable margins on device-to-device variations and parameter degradation. In this study, we present a comprehensive overview on the time-zero performance, variability, and reliability of a 28 nm bulk CMOS technology using thousands of transistors measured from room temperature down to 4 K. Moreover, we present a quantum-mechanical extension of the nonradiative multiphonon (NMP) model derived from bias temperature instability (BTI) measurements on long-channel transistors of the same technology to explain charge trapping kinetics at cryogenic temperatures.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133556937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films 顶端电极拉伸应力对Hf0.5Zr0.5O2薄膜铁电性的影响
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103065
Runhao Han, Peizhen Hong, Jingwen Hou, Zhang Bao, W. Xiong, Shuai Yang, Jianfeng Gao, Fei Liu, Z. Huo
{"title":"The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films","authors":"Runhao Han, Peizhen Hong, Jingwen Hou, Zhang Bao, W. Xiong, Shuai Yang, Jianfeng Gao, Fei Liu, Z. Huo","doi":"10.1109/EDTM55494.2023.10103065","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103065","url":null,"abstract":"In this report, we have investigated the effect of in-plane tensile stress on ferroelectricity of in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films, by changing the thickness of TiN top electrode. As demonstrated by residual stress analysis, excessive tensile stress would promote phase transition from the tetragonal phase to the monoclinic phase, and thus degrade the ferroelectric properties in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films. Our results suggest that there may be an optimal range of tensile stress to improve the ferroelectricity in HZO films.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116676020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A five-transistor active pixel sensor with a wide dynamic range and a high-speed pixel operation 具有宽动态范围和高速像素操作的五晶体管有源像素传感器
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102934
Tao Ma, Chao Gao, Qian Li, Yihong Qi, S. Deng, Kai Wang
{"title":"A five-transistor active pixel sensor with a wide dynamic range and a high-speed pixel operation","authors":"Tao Ma, Chao Gao, Qian Li, Yihong Qi, S. Deng, Kai Wang","doi":"10.1109/EDTM55494.2023.10102934","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102934","url":null,"abstract":"This work presents a novel active pixel sensor design intended for imaging applications that require a wide dynamic range and a fast pixel operation. Different from a conventional 4-transistor active pixel sensor (4-T APS), it adds a photodiode-body-biased MOSFET (PD-MOS) as a photo-induced current source which yields a wide dynamic range of over 140dB. Its exposure time can be then determined by transfer gate ON time instead of integration time of PD in the 4-TAPS, desirable for a high-speed pixel operation.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131841653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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