Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications

Abstract

In this paper, we present a general overview of AIGaN/GaN MOS channel High Electron Mobility Transistor (HEMTs) with fully recessed gate architecture fabricated on 200mm Si-wafer. Specifically, an insight on its benefits compared to market competitors is brought out respectively from transistor electrical characteristics to robustness behavioral aspects.