Runhao Han, Peizhen Hong, Jingwen Hou, Zhang Bao, W. Xiong, Shuai Yang, Jianfeng Gao, Fei Liu, Z. Huo
{"title":"The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films","authors":"Runhao Han, Peizhen Hong, Jingwen Hou, Zhang Bao, W. Xiong, Shuai Yang, Jianfeng Gao, Fei Liu, Z. Huo","doi":"10.1109/EDTM55494.2023.10103065","DOIUrl":null,"url":null,"abstract":"In this report, we have investigated the effect of in-plane tensile stress on ferroelectricity of in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films, by changing the thickness of TiN top electrode. As demonstrated by residual stress analysis, excessive tensile stress would promote phase transition from the tetragonal phase to the monoclinic phase, and thus degrade the ferroelectric properties in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films. Our results suggest that there may be an optimal range of tensile stress to improve the ferroelectricity in HZO films.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this report, we have investigated the effect of in-plane tensile stress on ferroelectricity of in Hf0.5Zr0.5O2 films, by changing the thickness of TiN top electrode. As demonstrated by residual stress analysis, excessive tensile stress would promote phase transition from the tetragonal phase to the monoclinic phase, and thus degrade the ferroelectric properties in Hf0.5Zr0.5O2 films. Our results suggest that there may be an optimal range of tensile stress to improve the ferroelectricity in HZO films.
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