电源应用的嵌入式MOS-HEMT技术的深刻见解

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10102971

B. Mohamad, C. L. Royer, F. Rigaud-Minet, C. Piotrowicz, P. F. Paes Pinto Rocha, C. Leurquin, W. Vandendaele, R. Escoffier, J. Buckley, S. Bécu, J. Biscarrat, R. Gwoziecki

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引用次数: 0

摘要

本文介绍了在200mm硅片上制造的AIGaN/GaN MOS沟道高电子迁移率晶体管(hemt)的总体概况。具体而言，从晶体管电特性到稳健性行为方面，分别对其与市场竞争对手相比的优势进行了洞察。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications

In this paper, we present a general overview of AIGaN/GaN MOS channel High Electron Mobility Transistor (HEMTs) with fully recessed gate architecture fabricated on 200mm Si-wafer. Specifically, an insight on its benefits compared to market competitors is brought out respectively from transistor electrical characteristics to robustness behavioral aspects.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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