新一代存储用铁电TiN/Hf0.5Zr0.5O2/TiN电容器热收支研究

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103015

Hye Ryeon Park, Jeong Gyu Yoo, Jong-Mook Kang, Min Kwan Cho, Taeho Gong, Seong-Chon Park, Seungbin Lee, Jin-Hyun Kim, Seojun Lee, Rino Choi, H. S. Kim, Y. Jung, Jiyoung Kim, S. Kim

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引用次数: 0

摘要

本研究研究了原子层沉积的HZO (Hf0.5Zr0.5O2)薄膜的热收支。具体而言，采用炉法对HZO薄膜进行结晶，在不同退火温度(300 ~ 500℃)和时间(1 ~ 48 h)条件下制备了TiN/HZO/TiN电容器。结果表明，虽然需要延长退火时间，但通过降低退火温度可以获得具有较强耐久性的铁电性能。

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A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications

In this study, the thermal budget of atomic layer deposited Hf0.5Zr0.5O2(HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500°C) and time (1–48 h) conditions. As a result, although the annealing time needs to be increased, the ferroelectric properties with robust endurance were realized by lowering the annealing temperature.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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