W. Ko, M. Song, Ki-Nam Kim, Jun-Ho Byun, Do-Yeon Lee, Eun-gi Kim, Eun-A Koo, So-Yeon Kwon, Geun-Ho Kim, Dong-Hyeuk Choi, Ga-Won Lee
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Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir
In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated devices show lower set/reset voltage and stable current, compared to the device without SiCN layer. XRD spectrum show it not a crystallization effect. Based on the XPS analysis results, SiCN layer seems to be a great oxygen blocking layer preventing the metal electrode from bonding with oxygen ion.
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