Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir

Abstract

In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated devices show lower set/reset voltage and stable current, compared to the device without SiCN layer. XRD spectrum show it not a crystallization effect. Based on the XPS analysis results, SiCN layer seems to be a great oxygen blocking layer preventing the metal electrode from bonding with oxygen ion.