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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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a-SiC(O,N):H thin films-their optical properties and possible applications a-SiC(O,N):H薄膜的光学性质及其可能的应用
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733773
J. Seekamp, W. Bauhofer
{"title":"a-SiC(O,N):H thin films-their optical properties and possible applications","authors":"J. Seekamp, W. Bauhofer","doi":"10.1109/SMICND.1998.733773","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733773","url":null,"abstract":"In this paper we summarize briefly the research on optical properties of a-Si/sub 1-x/C/sub x/(O,N):H thin films and possible applications in devices and microsystems. Materials produced by different deposition processes are compared. Films grown from light hydrocarbons and monosilane on the one hand and films of polymerized organosilanes deposited in wet chemical on the other are described. These outer ends are set in relation to a third class of films made by plasma polymerization. These were deposited from liquid organosilanes avoiding hazardous conditions and starting materials. All three groups show promising photoluminescence and waveguiding properties, and these are discussed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114224879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metallic contacts on porous silicon layers 多孔硅层上的金属接触
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733775
A. Angelescu, I. Kleps
{"title":"Metallic contacts on porous silicon layers","authors":"A. Angelescu, I. Kleps","doi":"10.1109/SMICND.1998.733775","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733775","url":null,"abstract":"The electrical properties of metallic contacts on porous silicon layers have been investigated with the aim to establish the most suitable contact material and preparation conditions for light emission devices. Different materials as: Au, In, Au-In, In-Sn, Al in a variety of preparation conditions have been used as a solid contact on the PS layers. The experimental I-V characteristics of different metal/PS/Si structures are analyzed by theory of Schottky diodes.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114264132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
/spl beta/TDA 2003-10 W monolithic audio amplifier /spl beta/TDA 2003- 10w单片音频放大器
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733787
C. Andreev, R. Ionita, A. Popa, D. Crisu, C. Dan
{"title":"/spl beta/TDA 2003-10 W monolithic audio amplifier","authors":"C. Andreev, R. Ionita, A. Popa, D. Crisu, C. Dan","doi":"10.1109/SMICND.1998.733787","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733787","url":null,"abstract":"In this paper a brief report on the issues concerning the redesign of the TDA 2003 audio amplifier is presented. The basic steps involved and the common trade-offs made in adapting to the Baneasa-S.A. SBC 44V technology are covered. Particular aspects of the redesign process are emphasized and the critical parts are highlighted.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123297263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient behaviour of high voltage termination techniques 高压端接技术的瞬态特性
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732322
C. Mingués, D. Dragomirescu, G. Charitat
{"title":"Transient behaviour of high voltage termination techniques","authors":"C. Mingués, D. Dragomirescu, G. Charitat","doi":"10.1109/SMICND.1998.732322","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732322","url":null,"abstract":"This paper presents some experimental and modelling results on two protection techniques currently used in both discrete and integrated devices, namely the biased ring and the SIPOS techniques. Both 2D simulations and macro models will be used to explain the physical working of a pin diode protected with one of the aforementioned technique submitted to a varying reverse bias, ranging from 50 V//spl mu/s up to 3000 V//spl mu/s. The results are compared to experimental data and are shown in good agreement. It appears from this work that the biased ring technique is rugged towards dV/dt up to 3000 V//spl mu/s, but the SIPOS one fails to protect the device for dV/dt equal to 300 V//spl mu/s.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129770851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation of integrated circuit's design limits 集成电路设计极限的评估
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732368
A. Andonova, D.T. Savov
{"title":"Evaluation of integrated circuit's design limits","authors":"A. Andonova, D.T. Savov","doi":"10.1109/SMICND.1998.732368","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732368","url":null,"abstract":"This paper presents an approach to evaluate the design limits of integrated circuits. The basis of that approach is a destructive evaluation performed on a small number of test items to measure their design limits. Results from applying it demonstrate that the approach can be quite effective for ALT experiments.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129433338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of the recovery characteristics of high power thyristors by selective irradiation 选择性辐照提高大功率晶闸管的恢复特性
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732377
V. Banu, E. Iliescu, A. Niculescu, M. Apostolescu, N. Sturzu
{"title":"Improvement of the recovery characteristics of high power thyristors by selective irradiation","authors":"V. Banu, E. Iliescu, A. Niculescu, M. Apostolescu, N. Sturzu","doi":"10.1109/SMICND.1998.732377","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732377","url":null,"abstract":"A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V//spl mu/s. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both V/sub T/ and I/sub R/ (125/spl deg/C).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"199 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128649276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Glass passivated chip-early reliability test 玻璃钝化芯片早期可靠性测试
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732364
B. Bucheru, F. Ţurţudău, A. Ichim, R. Iosif, V. Marinescu
{"title":"Glass passivated chip-early reliability test","authors":"B. Bucheru, F. Ţurţudău, A. Ichim, R. Iosif, V. Marinescu","doi":"10.1109/SMICND.1998.732364","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732364","url":null,"abstract":"The paper presents a method for the estimation of product reliability based on tests performed at the chip fabrication stage, which is time and money saving for manufacturer. It relates to the manufacture of automotive rectifier diodes in DO21 case. The aim was to establish to a correlation between the pressure resistance of chips and the results of standard reliability test, RTV (rapid thermal variations).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115917702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hundred MeV ion irradiation effect on dopant depth profiles in silicon 百MeV离子辐照对硅中掺杂物深度分布的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733832
E. P. Neustroev, I. Antonova, H.Yu. Didyk, N. Dinu, V. Skuratov
{"title":"Hundred MeV ion irradiation effect on dopant depth profiles in silicon","authors":"E. P. Neustroev, I. Antonova, H.Yu. Didyk, N. Dinu, V. Skuratov","doi":"10.1109/SMICND.1998.733832","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733832","url":null,"abstract":"The effect of 430 MeV Kr and 614 MeV Xe ion irradiation on the dopant (Al, As, Sb, Ga, Bi) profiles in silicon crystals has been investigated. It has been found a dopant redistribution as a result of this irradiation and the most pronounced effect was seen for Sb and Bi dopants. The observed effect could be attributed to an enhanced diffusion of dopants due to damage structure introduced by high-energy ion irradiation (HEII) in ion track range.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127623689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experiments on electron-beam irradiation effects on junction field effect transistors 电子束辐照结场效应晶体管的实验研究
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732373
C. Codreann, E. Iliescu
{"title":"Experiments on electron-beam irradiation effects on junction field effect transistors","authors":"C. Codreann, E. Iliescu","doi":"10.1109/SMICND.1998.732373","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732373","url":null,"abstract":"The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129009353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The 3D RESURF junction 3D RESURF连接点
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732318
F. Udrea, A. Popescu, W. Milne
{"title":"The 3D RESURF junction","authors":"F. Udrea, A. Popescu, W. Milne","doi":"10.1109/SMICND.1998.732318","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732318","url":null,"abstract":"This paper reports a new device concept-the 3D RESURF junction, which is applicable to a large class of power devices which we term 3D power devices. The new class of devices features considerably superior breakdown performance compared to any lateral power devices reported to date and challenges the state-of-the art vertical devices such as the VDMOSFET. The 3D Double Gate devices also benefit by having a low on-resistance due to carrier modulation in the drift region. The 3D RESURF is demonstrated numerically through extensive, advanced 2-D and 3-D simulations.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129195479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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