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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Emission capabilities of GaAs field emitter arrays fabricated using a HCl:H/sub 2/O/sub 2/:H/sub 2/O solution HCl:H/sub 2/O/sub 2/:H/sub 2/O溶液制备的GaAs场发射极阵列的发射性能
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733763
O. Yaradou, F. Ducroquet, P. Kropfield, A. Vanoverschelde
{"title":"Emission capabilities of GaAs field emitter arrays fabricated using a HCl:H/sub 2/O/sub 2/:H/sub 2/O solution","authors":"O. Yaradou, F. Ducroquet, P. Kropfield, A. Vanoverschelde","doi":"10.1109/SMICND.1998.733763","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733763","url":null,"abstract":"A HCl:H/sub 2/O:H/sub 2/O (40:4:1) solution shows highly isotropic features on GaAs etching. The etch rate of this mixture varies strongly with the age and temperature of the solution. For optimized etching, it was shown that these factors do not significantly affect the shape of the emitters but strongly influence the emission capabilities of the arrays.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructural features in amorphous Ge-S-Ga semiconductors 非晶Ge-S-Ga半导体的微观结构特征
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733782
Vesela Pamukcheva, G. Ivanova, Ventzislav, Vassilev
{"title":"Microstructural features in amorphous Ge-S-Ga semiconductors","authors":"Vesela Pamukcheva, G. Ivanova, Ventzislav, Vassilev","doi":"10.1109/SMICND.1998.733782","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733782","url":null,"abstract":"Variation of the micro-voids volume (Vh), their formation energy (Eh), and module of elasticity (E) with the composition of amorphous Ge-S-Ga films (as-evaporated and UV-exposed) has been studied. Most pronounced change in these parameters after illumination has been observed at GeS/sub 2/-based compositions with /spl sim/10 at% Ga. The obtained results are compared with those of Ge/sub 90-x/S/sub x/Ga/sub 10/ bulk glasses, taking into account the average coordination number (Z). Specific features at Z/spl sim/2.7 have been found, which can be related to the coexistence of topological and chemical thresholds around this value of Z.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125838234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The flatband potential and the rectification in the system ZnIn/sub 2/S/sub 4/-H/sub 2/O(S/sup 2-//S/sub 2//sup 2-/) ZnIn/sub 2/S/sub 4/- h /sub 2/O(S/sup 2-/ S/sub 2//sup 2-/)系统中的平带电位和整流
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733785
I. Tsiulyanu, A. Simashkevich, A. Sprinchean, R. Lyalikova
{"title":"The flatband potential and the rectification in the system ZnIn/sub 2/S/sub 4/-H/sub 2/O(S/sup 2-//S/sub 2//sup 2-/)","authors":"I. Tsiulyanu, A. Simashkevich, A. Sprinchean, R. Lyalikova","doi":"10.1109/SMICND.1998.733785","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733785","url":null,"abstract":"The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn/sub 2/S/sub 4/-electrolyte interface on the concentration of S/sup 2-/ and S/sub 2//sup 2-/ ions were studied. The current-voltage characteristics of the electrolyte-ZnI/sub 2/S/sub 4/ contact are determined by the potential barrier which is formed in the semiconductor near the interface.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129751033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon carbide power devices 碳化硅功率器件
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732305
J. Chante, M. Locatelli, D. Planson, L. Ottaviani, Erwan Morvan, K. Isoird, F. Nallet
{"title":"Silicon carbide power devices","authors":"J. Chante, M. Locatelli, D. Planson, L. Ottaviani, Erwan Morvan, K. Isoird, F. Nallet","doi":"10.1109/SMICND.1998.732305","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732305","url":null,"abstract":"The more and more demanding requirements of the power device users bring the silicon technology very close to its own physical limits. Silicon carbide (SiC) appears today as the only semiconductor having the capability for significantly improving the ratings of major power components (such as high voltage Schottky rectifiers), indeed for creating novel devices for new applications. The choice of SiC comes from superior physical properties, an existing substrate commercialization, and an experimental confirmation of several potentialities (at high voltage, temperature, or frequency) via demonstrative prototypes. However, such a young technology still suffers from a too poor quality of the available basic materials, and from the fabrication step immaturity, delaying the SiC power electronics emergence.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127434548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 225
Fractal properties of heat treated metal-compound semiconductor structures 热处理金属化合物半导体结构的分形特性
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733835
B. Kovács, L. Dobos, I. Mojzes, M. Schuszter
{"title":"Fractal properties of heat treated metal-compound semiconductor structures","authors":"B. Kovács, L. Dobos, I. Mojzes, M. Schuszter","doi":"10.1109/SMICND.1998.733835","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733835","url":null,"abstract":"The heat treatment of metallized Au(10 nm)/InP(100), Au(30 nm)/InP(100), Au(85 nm)/InP(100) structures were studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the surface morphology and the volatile component loss caused by the material interactions taking place during the heat treatment. Earlier experiments proved that the surface morphology can be characterized by its fractal dimension. In this paper the dependence of the fractal dimension of the surface pattern on the heat treatment temperature and on the metal thickness is described.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130843084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A dedicated data acquisition and monitors system for measuring the response times of gas sensors 用于测量气体传感器响应时间的专用数据采集和监控系统
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733829
A. Vasile, S. Setnic, E. Buzoianu
{"title":"A dedicated data acquisition and monitors system for measuring the response times of gas sensors","authors":"A. Vasile, S. Setnic, E. Buzoianu","doi":"10.1109/SMICND.1998.733829","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733829","url":null,"abstract":"For measuring the gas sensors response and recovery times a complex system was built. The gas concentration under the steady-state conditions is varied through a dilution system. We have demonstrated the feasibility of using an interactive program and an electronic system to study the response speed for gas sensors in multiple gas mixture. The system is generally enough to be extended to measurable parameters specific for gas sensors (EMF, R,I).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128825993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thin-film fully-depleted SOI CMOS technology, devices and circuits for LVLP analog/digital/microwave applications 薄膜全耗尽SOI CMOS技术，器件和电路LVLP模拟/数字/微波应用
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732302
D. Flandre, D. Vanhoenacker
{"title":"Thin-film fully-depleted SOI CMOS technology, devices and circuits for LVLP analog/digital/microwave applications","authors":"D. Flandre, D. Vanhoenacker","doi":"10.1109/SMICND.1998.732302","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732302","url":null,"abstract":"This paper demonstrates that fully-depleted silicon-on-insulator technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits, allowing for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122951320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal simulation of surface micromachined polysilicon hot plates of low power consumption 低功耗表面微加工多晶硅热板的热模拟
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732287
M. Dumitrescu, C. Cobianu, D. Lungu, D. Dascalu, A. Pascu, S. Kolev, A. van den Berg
{"title":"Thermal simulation of surface micromachined polysilicon hot plates of low power consumption","authors":"M. Dumitrescu, C. Cobianu, D. Lungu, D. Dascalu, A. Pascu, S. Kolev, A. van den Berg","doi":"10.1109/SMICND.1998.732287","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732287","url":null,"abstract":"A simple, IC compatible, surface micromachined polysilicon membrane was technologically designed and thermally simulated by 3D finite element \"COSMOS\" program in order to investigate its capability to work as a micro hot plate for a gas sensing test structure of low power consumption. For an optimised lay-out based on four \"poly\" suspended bridges and a central \"poly\" pillar supporting the 110/spl times/110 /spl mu/m \"poly\" membrane separated from the silicon substrate by 1 /spl mu/m of air gap, temperatures as high as 673 K were obtained for an input power of 100 mW.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122401457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A new architecture for low voltage temperature sensors 一种新的低压温度传感器结构
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732328
C. Stănescu
{"title":"A new architecture for low voltage temperature sensors","authors":"C. Stănescu","doi":"10.1109/SMICND.1998.732328","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732328","url":null,"abstract":"The paper presents a new architecture for low voltage temperature sensors, emphasizing its high potential. This architecture matches the ultimate solid-state implementations by allowing a 30 /spl mu/A quiescent current and a 2.7 V minimum supply voltage. Using this architecture, a precision centigrade temperature sensor has been designed in a thin-film resistor bipolar process.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxidation process effects on porous silicon photoluminescence 氧化过程对多孔硅光致发光的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733776
T.V. Torchinskaya, N.E. Korsunskaya, M. Sheĭnkman, L. Khomenkova, A.L. Kapitanchuk, Y. Goldstein, E. Savir, A. Many
{"title":"Oxidation process effects on porous silicon photoluminescence","authors":"T.V. Torchinskaya, N.E. Korsunskaya, M. Sheĭnkman, L. Khomenkova, A.L. Kapitanchuk, Y. Goldstein, E. Savir, A. Many","doi":"10.1109/SMICND.1998.733776","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733776","url":null,"abstract":"The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127786860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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