Emission capabilities of GaAs field emitter arrays fabricated using a HCl:H/sub 2/O/sub 2/:H/sub 2/O solution

Abstract

A HCl:H/sub 2/O:H/sub 2/O (40:4:1) solution shows highly isotropic features on GaAs etching. The etch rate of this mixture varies strongly with the age and temperature of the solution. For optimized etching, it was shown that these factors do not significantly affect the shape of the emitters but strongly influence the emission capabilities of the arrays.