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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Dependence of SiC/SiO/sub 2/ interface quality on substrate and dopant type SiC/SiO/sub - 2/界面质量与衬底和掺杂类型的关系
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732392
S. Berverich, P. Godignon, J. Millán, M. Locatelli, G. Brezeanu, M. Badila, A. Lebedev, H. Hartnagel
{"title":"Dependence of SiC/SiO/sub 2/ interface quality on substrate and dopant type","authors":"S. Berverich, P. Godignon, J. Millán, M. Locatelli, G. Brezeanu, M. Badila, A. Lebedev, H. Hartnagel","doi":"10.1109/SMICND.1998.732392","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732392","url":null,"abstract":"We investigated the electrical properties of dry thermal oxide on n and p-type Si-faced 6H and 4H-SiC wafers using capacitance-voltage measurements. The experimental CV data have been compared with simulated CV curves including oxide charge and interface state density determined previously using the conductance technique including band bending fluctuations.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114890503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of multilayer coating peculiarities on efficiency of surface plasmon resonance photodetector 多层涂层特性对表面等离子体共振光电探测器效率的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733805
N. Dmitruk, O.I. Mayeva, S. Mamykin, O. Fursenko, O. Yastrubchak
{"title":"Influence of multilayer coating peculiarities on efficiency of surface plasmon resonance photodetector","authors":"N. Dmitruk, O.I. Mayeva, S. Mamykin, O. Fursenko, O. Yastrubchak","doi":"10.1109/SMICND.1998.733805","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733805","url":null,"abstract":"A double metal layer system on the diffraction grating was used for increasing of efficiency of surface plasmon resonance (SPR) GaAs based photodetector. The design of it is based on commonly used thin metal films with optical constants that can be realized by using standard thermal evaporation techniques. The performance of detectors has been controlled over the wide range of visible spectrum by variation both geometric and structural parameters of diffraction grating. The sensitivity of the structures to changes in the angle of incidence, the wavelength, both the coating nature and index, etc. are presented.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114896076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of composition on refractive index dispersion in Ge-Sb-S thin films 成分对锗锑硫薄膜折射率色散的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732296
V. Pamukchieva, A. Szekeres, P. Sharlandjiev, Z. Alexia, M. Gartner
{"title":"Effect of composition on refractive index dispersion in Ge-Sb-S thin films","authors":"V. Pamukchieva, A. Szekeres, P. Sharlandjiev, Z. Alexia, M. Gartner","doi":"10.1109/SMICND.1998.732296","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732296","url":null,"abstract":"Ge/sub x/Sb/sub 40-x/S/sub 60/ thin films are studied by means of spectrophotometry in the light wavelength region of 0.5-2.5 /spl mu/m. The refractive index value were determined from the transmission spectra. The dispersion parameters E/sub 0/ and E/sub d/ were evaluated and considered in term of the average coordination number Z. The compositional dependences exhibit a peculiarity around Z=2.65-2.67 which can be connected with a topological phase transition of the film structure.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115017702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New result in 6H SiC "site-competition" epitaxy 6H SiC“位点竞争”外延的新成果
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733762
V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov
{"title":"New result in 6H SiC \"site-competition\" epitaxy","authors":"V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov","doi":"10.1109/SMICND.1998.733762","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733762","url":null,"abstract":"The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115989442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cathodoluminescence spectroscopy of ZnS:Al annealed in Bi melt 铋熔体中退火ZnS:Al的阴极发光光谱
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733808
M. V. Nazarov, T. A. Nazarova, A.V. Simashkevich, R. Sobolevskaya, K. Sushkevich, V. Korotkov, L. Bruk, V. Petrov, A. S. Petrov
{"title":"Cathodoluminescence spectroscopy of ZnS:Al annealed in Bi melt","authors":"M. V. Nazarov, T. A. Nazarova, A.V. Simashkevich, R. Sobolevskaya, K. Sushkevich, V. Korotkov, L. Bruk, V. Petrov, A. S. Petrov","doi":"10.1109/SMICND.1998.733808","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733808","url":null,"abstract":"Colour cathodoluminescence (CCL) offers a highly sensitive technique for the qualitative and quantitative luminescence analysis of semiconductor materials and devices. High spatial and spectral resolution is possible. ZnS:Al crystals subjected to various thermal treatments have been investigated and a wealth of previously unobservable information has been obtained.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129851275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An auto-scaling ruler for the L-Edit/sup TM/ layout editor implemented using L-Edit/UPI/sup TM/ subroutine library 使用L-Edit/UPI/sup TM/子程序库实现的L-Edit/sup TM/布局编辑器的自动缩放标尺
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733792
D. Crisu, C. Dan
{"title":"An auto-scaling ruler for the L-Edit/sup TM/ layout editor implemented using L-Edit/UPI/sup TM/ subroutine library","authors":"D. Crisu, C. Dan","doi":"10.1109/SMICND.1998.733792","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733792","url":null,"abstract":"A new software implementation of an auto-scaling ruler with respect to technology units for measuring layout spacing is presented. It extends the capabilities of the L-Edit layout editor, enabling the designer to focus on real work and not to count down and do basic arithmetic with internal units and grid settings.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124013530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectroscopical study of amorphous AsSe films containing tin impurity 含锡杂质无定形AsSe薄膜的光谱研究
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732299
M. Iovu, M. Popescu, N. Syrbu, S. Shutov, I. Vasiliev, S. Z. Rebeja, E. Colomeico
{"title":"Spectroscopical study of amorphous AsSe films containing tin impurity","authors":"M. Iovu, M. Popescu, N. Syrbu, S. Shutov, I. Vasiliev, S. Z. Rebeja, E. Colomeico","doi":"10.1109/SMICND.1998.732299","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732299","url":null,"abstract":"Optical absorption of thermally deposited AsSe films doped with Sn impurity (1 to 10 at.%) is studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. The effect of tin impurity on both extended and localized electronic states is revealed. Over the fundamental edge absorption region a correlation between the band tail width and optical gap is demonstrated for various tin concentrations.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126581648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetoresistive properties of permalloy thin films and permalloy/Cu multilayers 坡莫合金薄膜和坡莫合金/Cu多层膜的磁阻特性
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732348
J. Neamtu, M. Volmer, A. Coraci
{"title":"Magnetoresistive properties of permalloy thin films and permalloy/Cu multilayers","authors":"J. Neamtu, M. Volmer, A. Coraci","doi":"10.1109/SMICND.1998.732348","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732348","url":null,"abstract":"The results on the magnetic properties, such as anisotropic magnetoresistance (AMR) of NiFe (permalloy) thin films and giant magnetoresistance (GMR) of (NiFe/Cu/NiFe) multilayers have been investigated. The correlation of the magnetoresistance effects with microstructure and deposition parameters of magnetic thin films and multilayers is presented.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133563886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures 质子辐照6H-SiC pn结构中非平衡载流子的稳态寿命
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732390
A. Strel'chuk, V. Kozlovski, N. Savkina, M. Rastegaeva, A. Andreev
{"title":"Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures","authors":"A. Strel'chuk, V. Kozlovski, N. Savkina, M. Rastegaeva, A. Andreev","doi":"10.1109/SMICND.1998.732390","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732390","url":null,"abstract":"The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/<J<10/sup 0/ A/cm/sup 2/. The irradiation dose 3.6 10/sup 14/ cm/sup -2/ decreased the lifetime of nonequilibrium carriers for deep-level recombination in the space charge region by up to 2 orders of magnitude. The irradiation dose of 1.8 10/sup 15/ cm/sup -2/, or anneal in the range 300-800 K did not change the lifetime.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133812573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
I-V characterisation of resonant tunneling diodes 谐振隧道二极管的I-V特性
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733836
L. Dózsa, F. Riesz, V. Tuyen, B. Szentpáli, A. Muller
{"title":"I-V characterisation of resonant tunneling diodes","authors":"L. Dózsa, F. Riesz, V. Tuyen, B. Szentpáli, A. Muller","doi":"10.1109/SMICND.1998.733836","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733836","url":null,"abstract":"The current-voltage characteristics of AlAs/GaAs resonant tunnelling diodes are measured in steady state circumstances and by a new method in the submicrosecond time scale. The results show that I-V characteristics are sensitive to the measuring time due to internal transient of the device. The internal transients are identified as thermal transients and as charge accumulation at the barriers and in localised electronic states. It is concluded that a reliable I-V characterisation of these devices is possible only when the results measured by different methods is compared and analysed properly.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114402219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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