I-V characterisation of resonant tunneling diodes

Abstract

The current-voltage characteristics of AlAs/GaAs resonant tunnelling diodes are measured in steady state circumstances and by a new method in the submicrosecond time scale. The results show that I-V characteristics are sensitive to the measuring time due to internal transient of the device. The internal transients are identified as thermal transients and as charge accumulation at the barriers and in localised electronic states. It is concluded that a reliable I-V characterisation of these devices is possible only when the results measured by different methods is compared and analysed properly.