SiC/SiO/sub - 2/界面质量与衬底和掺杂类型的关系

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732392

S. Berverich, P. Godignon, J. Millán, M. Locatelli, G. Brezeanu, M. Badila, A. Lebedev, H. Hartnagel

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引用次数: 0

摘要

通过电容电压测量，研究了n型和p型硅面6H和4H-SiC硅片上干热氧化物的电学性能。实验的CV数据与模拟的CV曲线进行了比较，包括氧化物电荷和界面态密度，之前使用电导技术确定了带弯曲波动。

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Dependence of SiC/SiO/sub 2/ interface quality on substrate and dopant type

We investigated the electrical properties of dry thermal oxide on n and p-type Si-faced 6H and 4H-SiC wafers using capacitance-voltage measurements. The experimental CV data have been compared with simulated CV curves including oxide charge and interface state density determined previously using the conductance technique including band bending fluctuations.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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