6H SiC“位点竞争”外延的新成果

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733762

V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov

{"title":"6H SiC“位点竞争”外延的新成果","authors":"V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov","doi":"10.1109/SMICND.1998.733762","DOIUrl":null,"url":null,"abstract":"The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New result in 6H SiC \\\"site-competition\\\" epitaxy\",\"authors\":\"V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov\",\"doi\":\"10.1109/SMICND.1998.733762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.733762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对甲烷-硅烷-氢体系CVD生长的6H-SiC层的研究表明，随着气相C/Si比的增加，其电导率类型发生反转。对生长的p型电导率层的i - dts研究表明，N/sub a /-N/sub D/的主要贡献是得到了一个较深的受体中心，这与升华外延法制备的p型电导率层的通常背景中心参数接近。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

New result in 6H SiC "site-competition" epitaxy

The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

自引率

0.00%

发文量