含锡杂质无定形AsSe薄膜的光谱研究

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732299

M. Iovu, M. Popescu, N. Syrbu, S. Shutov, I. Vasiliev, S. Z. Rebeja, E. Colomeico

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引用次数: 0

摘要

采用反射光谱、吸收光谱、光响应光谱和光电容光谱相结合的方法，研究了在0.8 ~ 6.2 eV的宽能量区间内，掺杂Sn杂质(1 ~ 10 at.%)的热沉积AsSe薄膜的光吸收特性。揭示了锡杂质对扩展态和局域态的影响。在基边吸收区，在不同的锡浓度下，带尾宽度和光隙之间存在相关性。

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Spectroscopical study of amorphous AsSe films containing tin impurity

Optical absorption of thermally deposited AsSe films doped with Sn impurity (1 to 10 at.%) is studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. The effect of tin impurity on both extended and localized electronic states is revealed. Over the fundamental edge absorption region a correlation between the band tail width and optical gap is demonstrated for various tin concentrations.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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