Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732390

A. Strel'chuk, V. Kozlovski, N. Savkina, M. Rastegaeva, A. Andreev

引用次数: 0

Abstract

The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/

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质子辐照6H-SiC pn结构中非平衡载流子的稳态寿命

研究了质子辐照对6H-SiC外延pn结构非平衡载流子稳态寿命值的影响。寿命作为Sah-Noyce-Shockley模型的参数，用于解释电流密度为10/sup -6/

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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