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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Preparation and properties of electrodeposited InSe and Cu/sub x/Se thin films 电沉积InSe和Cu/sub x/Se薄膜的制备及性能研究
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732357
P. Obreja, A. Corici, O. Radovici
{"title":"Preparation and properties of electrodeposited InSe and Cu/sub x/Se thin films","authors":"P. Obreja, A. Corici, O. Radovici","doi":"10.1109/SMICND.1998.732357","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732357","url":null,"abstract":"InSe and Cu/sub x/Se thin films have been obtained by electrochemical method onto indium-tin oxide substrate from aqueous acidic solutions. The samples were characterized by visible spectrophotometers. The quality of materials strongly depends on deposition potentials and annealing process, which have to be applied after film deposition.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115194364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Long-term base current instability: a major concern for AlGaAs/GaAs HBT reliability 长期基极电流不稳定性:AlGaAs/GaAs HBT可靠性的主要问题
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732266
J. Liou
{"title":"Long-term base current instability: a major concern for AlGaAs/GaAs HBT reliability","authors":"J. Liou","doi":"10.1109/SMICND.1998.732266","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732266","url":null,"abstract":"This paper provides an overview of the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a main mechanism governing the HBT long-term current gain drift and thus a major concern for the HBT reliability. Topics covered include: (1) types of base current instability and their underlying physical mechanisms; (2) leakage currents in the HBT and their relevance to the reliability; (3) electro-thermal interaction and their impact on the HBT reliability; and (4) analytic model for predicting the HBT mean time to failure (MTTF). Measurements and device simulation results are also included in support of the modeling and analysis.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130855776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Correlation between chemical composition of transitional layer and electro-physical properties of Me-n-InP Schottky barriers 过渡层化学成分与Me-n-InP肖特基势垒电物理性质的关系
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732384
G. S. Korotchenkov, N. P. Bejan
{"title":"Correlation between chemical composition of transitional layer and electro-physical properties of Me-n-InP Schottky barriers","authors":"G. S. Korotchenkov, N. P. Bejan","doi":"10.1109/SMICND.1998.732384","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732384","url":null,"abstract":"In this report results of the analysis of tunnel transparency and physical-chemical properties of transitional layer between metal and InP real surface have been presented. It was determined that electro-physical properties of Me-n-InP Schottky barriers are correlated with chemical composition of InP own oxides. For explanation of shown effects, it was proposed the model of transitional layer and mechanism of it's property changing during thermal treatment.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128822733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices 超声处理是半导体材料和器件缺陷工程的新途径
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732332
M. K. Sheinkman, N. Korsunskaya, S. Ostapenko
{"title":"Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices","authors":"M. K. Sheinkman, N. Korsunskaya, S. Ostapenko","doi":"10.1109/SMICND.1998.732332","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732332","url":null,"abstract":"UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photovoltaic properties of the ITO/CuPc/(CuPc+TPyP)/TPyP/Al cells (II) ITO/CuPc/(CuPc+TPyP)/TPyP/Al电池的光伏特性(II)
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733807
S. Antobe, A. Merticaru
{"title":"Photovoltaic properties of the ITO/CuPc/(CuPc+TPyP)/TPyP/Al cells (II)","authors":"S. Antobe, A. Merticaru","doi":"10.1109/SMICND.1998.733807","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733807","url":null,"abstract":"Three-layered organic solar cells with an interlayer of codeposited dyes of p-type Copper Phthalocyanine (CuPc) and n-type 5,10,15,20-Tetra (4-Pyridil)21H,23H-Porphine (TPyP) between the respective dye layers were prepared and characterized. The analysis of photovoltaic properties shows that the photocurrent of three-layered cells is about ten times larger than that of a double layered cell, due to the efficient carrier photogeneration in the codeposited layer. The best power conversion efficiency, of 0.35%, was obtained under illumination with monochromatic light of 30 /spl mu/W/cm/sup 2/, at 520 nm.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115033019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon linear image sensors for photometry 光度测量用硅线性图像传感器
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732279
V. Cimpoca, D. Cengher, C. Crișan, N. Olariu, C. Oros, M. Cimpoca
{"title":"Silicon linear image sensors for photometry","authors":"V. Cimpoca, D. Cengher, C. Crișan, N. Olariu, C. Oros, M. Cimpoca","doi":"10.1109/SMICND.1998.732279","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732279","url":null,"abstract":"The paper describes a new linear image sensor for photometry by applying bipolar technology (Standard Buried Collector-SBC) to the manufacture of self-scanning linear photodiode arrays. On a monolithic chip we have designed 128 to 1024 linear photodiodes, demultiplexing system and signals processing system. A dynamic simulation and a real-time measurement have been implemented, that allow to take into account every operational phase of detection. The dialogue between the various functions in established by message's transmission, using common data areas stored on disks or in central memory of PC compatible computer.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116049656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TiO/sub 2/ anodic oxide films for oxygen gas sensors 氧传感器用TiO/ sub2 /阳极氧化膜
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733813
C. Podaru, V. Avramescu, R. Enache, G. Stoica
{"title":"TiO/sub 2/ anodic oxide films for oxygen gas sensors","authors":"C. Podaru, V. Avramescu, R. Enache, G. Stoica","doi":"10.1109/SMICND.1998.733813","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733813","url":null,"abstract":"This paper presents a method used to produce TiO/sub 2/ sensitive layers based on the selective anodization of the titanium thin film realised by vacuum evaporation. Photoresist was used as mask for anodization. The thickness of the TiO/sub 2/ layers obtained in this experiment was between 1000-1200 /spl Aring/. IR and X-ray investigation were performed in order to characterize the structure of the layer. Sensitivity to O/sub 2/ was measured using a dedicated micromachine silicon structure. A quasilinear dependence of the resistivity of the TiO/sub 2/ layer versus the O/sub 2/ concentration was observed in the range of 100-10000 ppm.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132520289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experiences on VHDL based methodologies on industrial ASIC design 基于VHDL的工业专用集成电路设计经验
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732327
M. Moré, J. Vidal, E. Lecha, F. Rincón, L. Terés
{"title":"Experiences on VHDL based methodologies on industrial ASIC design","authors":"M. Moré, J. Vidal, E. Lecha, F. Rincón, L. Terés","doi":"10.1109/SMICND.1998.732327","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732327","url":null,"abstract":"This paper presents the design of two ASICs (CIMCO, PEC31750), both implemented following a VHDL based top-down methodology. CIMCO is an adaptive equaliser based on a Decision Feedback Equaliser (DFE) which is intended to be included in a cellular phone improving the demodulation stage in a DECT path. PEC31750 is a radiation hardened peripheral controller for embedded space applications. This chip is designed to work with the MA31750 processor, and both chips together form a general-purpose microcontroller system core for embedded space applications on-board spacecraft.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134331265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ellipsometric studies of SOI structures SOI结构的椭偏研究
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732362
L. Zabashta, O. I. Zabashta, E. Bortchagovsky, B. Romanyuk, V. Melnik
{"title":"Ellipsometric studies of SOI structures","authors":"L. Zabashta, O. I. Zabashta, E. Bortchagovsky, B. Romanyuk, V. Melnik","doi":"10.1109/SMICND.1998.732362","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732362","url":null,"abstract":"In this work the multiangle ellipsometry and electron Auger spectroscopy are employed to investigate the optical properties and elemental composition of SOI structures with hidden dielectric layers. The /spl Delta/ and /spl psi/ dependence on the implantation and heat treatment conditions is examined. The MAI ellipsometric data at 632.8 nm are fitted with the multilayer models. The optic multilayer model was constructed based on the sputter depth profiling data obtained by Auger spectroscopy. The optic parameters for the multilayer model are determined by solving the ellipsometry inverse problem using the numerical algorithm developed earlier involving Tikhonov's regularisation technique. Front the multiangle ellipsometry data the damage levels in the amorphous Si layer are estimated as function of the implantation and heat treatments conditions.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134368506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Theoretical model for carriers transport in nanocrystalline porous silicon films 纳米晶多孔硅薄膜中载流子输运的理论模型
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732300
M. Ciurea, V. Iancu, G. Pavelescu, I. Baltog
{"title":"Theoretical model for carriers transport in nanocrystalline porous silicon films","authors":"M. Ciurea, V. Iancu, G. Pavelescu, I. Baltog","doi":"10.1109/SMICND.1998.732300","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732300","url":null,"abstract":"A quantum confinement model is proposed to explain the carriers transport in a nanowire network of porous silicon. The electron Hamiltonian is written as a sum of the longitudinal and the transversal contributions. The last one corresponds to a two-dimensional infinite cylindrical quantum well, whose energy levels determine the activation energies observed in the temperature dependence of the dark current. The model is in excellent agreement with the experimental data.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127632756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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