电沉积InSe和Cu/sub x/Se薄膜的制备及性能研究

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732357

P. Obreja, A. Corici, O. Radovici

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引用次数: 0

摘要

用电化学方法在酸性水溶液中在氧化铟锡衬底上制备了InSe和Cu/sub x/Se薄膜。用可见分光光度计对样品进行表征。材料的质量很大程度上取决于沉积电位和退火工艺，这是在薄膜沉积后必须应用的。

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Preparation and properties of electrodeposited InSe and Cu/sub x/Se thin films

InSe and Cu/sub x/Se thin films have been obtained by electrochemical method onto indium-tin oxide substrate from aqueous acidic solutions. The samples were characterized by visible spectrophotometers. The quality of materials strongly depends on deposition potentials and annealing process, which have to be applied after film deposition.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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