{"title":"Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices","authors":"M. K. Sheinkman, N. Korsunskaya, S. Ostapenko","doi":"10.1109/SMICND.1998.732332","DOIUrl":null,"url":null,"abstract":"UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.