纳米晶多孔硅薄膜中载流子输运的理论模型

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732300

M. Ciurea, V. Iancu, G. Pavelescu, I. Baltog

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引用次数: 1

摘要

提出了一个量子约束模型来解释多孔硅纳米线网络中载流子的输运。电子哈密顿量被写成纵向和横向贡献的总和。最后一个对应于二维无限圆柱形量子阱，其能级决定了暗电流温度依赖性中观察到的活化能。该模型与实验数据吻合良好。

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Theoretical model for carriers transport in nanocrystalline porous silicon films

A quantum confinement model is proposed to explain the carriers transport in a nanowire network of porous silicon. The electron Hamiltonian is written as a sum of the longitudinal and the transversal contributions. The last one corresponds to a two-dimensional infinite cylindrical quantum well, whose energy levels determine the activation energies observed in the temperature dependence of the dark current. The model is in excellent agreement with the experimental data.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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