氧传感器用TiO/ sub2 /阳极氧化膜

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733813

C. Podaru, V. Avramescu, R. Enache, G. Stoica

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引用次数: 2

摘要

本文提出了一种利用真空蒸发法对钛薄膜进行选择性阳极氧化，制备TiO/ sub2 /敏感层的方法。采用光刻胶作为阳极氧化掩膜。实验得到的TiO/sub 2/层厚度在1000 ~ 1200 /spl /之间。为了表征该层的结构，进行了红外和x射线研究。对O/sub 2/的灵敏度采用专用的微机械硅结构进行测量。在100 ~ 10000 ppm范围内，TiO/sub - 2/层的电阻率与O/sub - 2/浓度呈拟线性关系。

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TiO/sub 2/ anodic oxide films for oxygen gas sensors

This paper presents a method used to produce TiO/sub 2/ sensitive layers based on the selective anodization of the titanium thin film realised by vacuum evaporation. Photoresist was used as mask for anodization. The thickness of the TiO/sub 2/ layers obtained in this experiment was between 1000-1200 /spl Aring/. IR and X-ray investigation were performed in order to characterize the structure of the layer. Sensitivity to O/sub 2/ was measured using a dedicated micromachine silicon structure. A quasilinear dependence of the resistivity of the TiO/sub 2/ layer versus the O/sub 2/ concentration was observed in the range of 100-10000 ppm.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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