过渡层化学成分与Me-n-InP肖特基势垒电物理性质的关系

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732384

G. S. Korotchenkov, N. P. Bejan

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引用次数: 0

摘要

本文介绍了金属与铟磷真实表面过渡层的隧道透明度和物理化学性质的分析结果。确定了Me-n-InP肖特基势垒的电物理性质与InP自身氧化物的化学成分有关。为了解释所显示的效果，提出了过渡层模型及其热处理过程中性能变化的机理。

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Correlation between chemical composition of transitional layer and electro-physical properties of Me-n-InP Schottky barriers

In this report results of the analysis of tunnel transparency and physical-chemical properties of transitional layer between metal and InP real surface have been presented. It was determined that electro-physical properties of Me-n-InP Schottky barriers are correlated with chemical composition of InP own oxides. For explanation of shown effects, it was proposed the model of transitional layer and mechanism of it's property changing during thermal treatment.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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